參數(shù)資料
型號: M366S3953MTS-C1H
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: Shrink Tubing; Tubing Size Diameter:2"; Shrink Temperature:100 C; Wall Thickness Recovered Nominal:0.045"; Inner Diameter Max Recovered:1.000"; Expanded Inner Diameter:2.000"; Material:Polyolefin; Approval Bodies:UL, CSA
中文描述: PC133/PC100無緩沖DIMM
文件頁數(shù): 5/9頁
文件大?。?/td> 135K
代理商: M366S3953MTS-C1H
PC133/PC100 Unbuffered DIMM
M366S2953MTS
REV. 0.0 Dec. 2001
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
°
C)
Parameter
Symbol
Test Condition
Version
Unit
Note
-75
-1H
-1L
Operating current
(One bank active)
I
CC1
Burst length = 1
t
RC
t
RC
(min)
I
O
= 0 mA
2000
1840
mA
1
Precharge standby cur-
rent in power-down mode
I
CC2
P
CKE
V
IL
(max), t
CC
= 10ns
CKE & CLK
V
IL
(max), t
CC
=
95
mA
I
CC2
PS
80
Precharge standby cur-
rent in non power-down
mode
I
CC2
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
480
mA
I
CC2
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
160
Active standby current in
power-down mode
I
CC3
P
CKE
V
IL
(max), t
CC
= 10ns
CKE & CLK
V
IL
(max), t
CC
=
160
mA
I
CC3
PS
130
Active standby current in
non power-down mode
(One bank active)
I
CC3
N
CKE
V
IH
(min), CS
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
800
mA
I
CC3
NS
CKE
V
IH
(min), CLK
V
IL
(max), t
CC
=
Input signals are stable
560
mA
Operating current
(Burst mode)
I
CC4
I
O
= 0 mA
Page burst
4banks Activated.
t
CCD
= 2CLKs
2000
1760
mA
1
Refresh current
I
CC5
t
RC
t
RC
(min)
3040
2880
mA
2
Self refresh current
I
CC6
CKE
0.2V
112
mA
mA
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ
).
Notes :
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