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參數(shù)資料
| 型號： | M366S3953MTS-C1H |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Shrink Tubing; Tubing Size Diameter:2"; Shrink Temperature:100 C; Wall Thickness Recovered Nominal:0.045"; Inner Diameter Max Recovered:1.000"; Expanded Inner Diameter:2.000"; Material:Polyolefin; Approval Bodies:UL, CSA |
| 中文描述： | PC133/PC100無緩沖DIMM |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 135K |
| 代理商： | M366S3953MTS-C1H |
PC133/PC100 Unbuffered DIMM
M366S2953MTS
REV. 0.0 Dec. 2001
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
16
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
= 1.4V
±
200
mV)
Pin
Symbol
Min
Max
Unit
Address (A0 ~ A12, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0 ~ CKE1)
Clock (CLK0 ~ CLK3)
CS (CS0, CS2)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
C
ADD
C
IN
C
CKE
C
CLK
C
CS
C
DQM
C
OUT
80
80
50
40
25
15
10
100
100
60
45
35
20
15
pF
pF
pF
pF
pF
pF
pF
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
Input logic high voltage
V
IH
2.0
3.0
V
DDQ
+0.3
V
1
Input logic low voltage
V
IL
-0.3
0
0.8
V
2
Output logic high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output logic low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current
I
LI
-10
-
10
uA
3
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Notes :
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| M366S6453AT0-C1H00 | 制造商:Samsung SDI 功能描述:64M X 64 SDRAM DIMM based on 32M X 8, 4banks, 8K refresh, 3.3V synchronous drams with spd |
| M366S6453CTS | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC133/PC100 Unbuffered DIMM |
| M366S6453CTS-L1H/C1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC133/PC100 Unbuffered DIMM |
| M366S6453CTS-L1L/C1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC133/PC100 Unbuffered DIMM |
| M366S6453CTS-L7A/C7A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:PC133/PC100 Unbuffered DIMM |
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