參數(shù)資料
型號(hào)： M306NNMG-XXXGP
元件分類： 微控制器/微處理器
英文描述： 16-BIT, MROM, 24 MHz, MICROCONTROLLER, PQFP128
封裝： 14 X 20 MM, 0.50 MM PITCH, PLASTIC, LQFP-128
文件頁(yè)數(shù)： 33/72頁(yè)
文件大?。?/td> 649K
代理商： M306NNMG-XXXGP
Rev.2.10
Aug 25, 2006
page 37 of 67
REJ03B0061-0210
M16C/6N Group (M16C/6NL, M16C/6NN)
5. Electric Characteristics
Under development
This document is under development and its contents are subject to change.
2
150
ms
s
Time for internal power supply stabilization during powering-on
STOP release time
Low power dissipation mode wait mode release time
td(P-R)
td(R-S)
td(W-S)
Symbol
Parameter
Min.
Standard
Unit
Measuring
Condition
Max.
Typ.
VCC = 3.0 to 5.5 V
Table 5.10 Power Supply Circuit Timing Characteristics
CPU clock
VCC
td(P-R)
td(P-R)
Time for internal power supply
stabilization during powering-on
td(R-S)
STOP release time
td(W-S)
Low power dissipation mode
wait mode release time
CPU clock
td(W-S)
td(R-S)
(b)
(a)
Interrupt for
(a) Stop mode release
or
(b) Wait mode release
Figure 5.1 Power Supply Circuit Timing Diagram
VCC = 3.3 ± 0.3 V or 5.0 ± 0.5 V
Flash Read Operation Voltage
Flash Program, Erase Voltage
VCC = 3.0 to 5.5 V
Table 5.8 Flash Memory Version Electrical Characteristics
(1)
NOTES:
1. Referenced to VCC = 4.5 to 5.5 V, 3.0 to 3.6 V, Topr = 0 to 60°C unless otherwise specified.
2. Programming and erasure endurance refers to the number of times a block erase can be performed.
If the programming and erasure endurance is n (n = 100), each block can be erased n times.
For example, if a 4-Kbyte block A is erased after writing 1 word data 2,048 times, each to a different address,
this counts as one programming and erasure endurance. Data cannot be written to the same address more
than once without erasing the block (rewrite prohibited).
3. n denotes the number of blocks to erase.
Table 5.9 Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics
(at Topr = 0 to 60°C)
200
4
n (3)
15
cycle
s
Programming and erasure endurance
(2)
Word program time (VCC = 5.0 V)
Lock bit program time
Block erase time
4-Kbyte block
(VCC = 5.0 V)
8-Kbyte block
32-Kbyte block
64-Kbyte block
Erase all unlocked blocks time
Flash memory circuit stabilization wait time
Parameter
Min.
Standard
Unit
Max.
Typ.
25
0.3
0.5
0.8
Symbol
-
tps
100
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