
1-181
dUnde
Specifications in this manual are tentative and subject to change
Rev. G
Electrical Characteristics
MITSUBISHI MICROCOMPUTERS
M30222 Group
SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER
Table 1.59. Electrical characteristics (referenced to Vcc = 5V, Vss = 0V at Ta = 25°C, f(Xin) = 16MHz
unless otherwise specified.
Symbol
Parameter
Measuring condition
Standard
Unit
Min
Typ.
Max
V
OH
High
output
voltage
P3
0
to P3
7
, P4
0
to P4
7
, P6
0
to
P6
7
, P7
0
to P7
7
, P8
0
to P8
2
, P8
4
to P8
6
, P9
0
to P9
7
, P10
0
to P10
7
I
OH
=-5mA
3.0
V
V
OH
High
voltage
P3
0
to P3
7
, P4
0
to P4
7
, P6
0
to
P6
7
, P7
0
to P7
7
, P8
0
to P8
2
, P8
4
to P8
6
, P9
0
to P9
7
, P10
0
to P10
7
I
OH
=-200
μ
A
4.7
V
V
OH
High out-
put
Xout
High power
I
OH
=-1mA
3.0
V
Low power
I
OH
=-0.5mA
3.0
V
High
output
Xcout
High power
With no load applied
3.0
V
Low power
With no load applied
1.6
V
V
OL
Low
output
voltage
P3
0
to P3
7
, P4
0
to P4
7
, P6
0
to
P6
7
, P7
0
to P7
7
, P8
to P8
, P8
4
to P8
6
, P9
0
to P9
7
, P10
0
to P10
7
I
OL
=-5mA
2.0
V
V
OL
Low
output
voltage
P3
0
to P3
, P4
0
to P4
, P6
0
to
P6
7
, P7
0
to P7
7
, P8
0
to P8
2
, P8
4
to P8
6
, P9
0
to P9
7
, P10
0
to P10
7
I
OL
=-200
μ
A
0.45
V
V
OL
Low
output
voltage
Xout
High power
I
OL
=-1mA
2.0
V
Low power
I
OL
=-0.5mA
2.0
V
Low
output
voltage
Xcout
High power
With no load applied
0
V
Low power
With no load applied
0
V
V
T
+ - V
T
-
Hysteresis
TA0in to TA4in, TA0in to TB3in,
INT0 to INT5, AD
, CTS0,
CTS1, CLK0, CLK1, TA2out to
TA4out, NMI, KI0 to KI4
0.2
0.8
V
V
T
+ - V
T
-
Hysteresis
RESET
0.2
1.8
V
I
IH
High input
current
Xin, RESET, CNVss, P3
0
to
P3
7
, P4
0
to P4
7
, P6
0
to P6
7
, P7
0
to P7
7
, P8
0
to P8
6
, P9
0
to P9
7
,
P10
0
to P10
7
V
I
=5V
5.0
μ
A
I
IL
Low input
Xin, RESET, CNVss, P3
0
to
P3
7
, P4
0
to P4
7
, P6
0
to P6
7
, P7
0
to P7
, P8
0
to P8
6
, P9
0
to P9
7
,
P10
0
to P10
7
V
I
=0
-5
.
0
μ
A
R
PULLUP
Pull-up
resistance
P3
0
to P3
, P4
0
to P4
, P6
0
to
P6
7
, P7
0
to P7
7
, P8
0
to P8
2
, P8
4
to P8
6,
P9
0
to P9
7
, P10
0
to P10
7
V
I
=0V
30.0
50.0
167.0
k
R
f(Xin)
Feedback resistance
Xin
1.0
M
R
f(Xcin)
Feedback resistence
Xcin
6.0
M
V
RAM
RAM retention voltage
When clock is stopped
2.0
V
Icc
Power supply current
Mask ROM versions
f(Xin) =16 MHz
Square wave, no
division
30.0
50.0
mA
Flash memory 5V
version
f(Xin) =16 MHz
Square wave, no
35.0
50.0
mA
Mask ROM versions
f(Xcin) =32 kHz
Square wave
90.0
μ
A
Flash memory 5V
version
f(Xcin) =32 kHz
Square wave
8.0
mA
f(Xcin) =32 kHz
When a WAIT
instruction is
executed
4.0
μ
A
Ta =25
o
C
when clock is
stopped
1.0
μ
A
Ta = 85
o
C when
clock is stopped
20.0