- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370826 > M2S28D30ATP-10 (Mitsubishi Electric Corporation) 128M Double Data Rate Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號： | M2S28D30ATP-10 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 128M Double Data Rate Synchronous DRAM |
| 中文描述： | 128M的雙數(shù)據(jù)速率同步DRAM |
| 文件頁數(shù)： | 23/36頁 |
| 文件大?。?/td> | 1216K |
| 代理商： | M2S28D30ATP-10 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁當(dāng)前第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁
23
MITSUBISHI ELECTRIC
Jun,'00
Preliminary
MITSUBISHI LSIs
DDR SDRAM (Rev.0.1)
M2S28D20/ 30/ 40ATP
128M Double Data Rate Synchronous DRAM
After tRCD from the bank activation, a READ command can be issued. 1st Output data is available
after the /CAS Latency from the READ, followed by (BL-1) consecutive data when the Burst Length
is BL. The start address is specified by A11,A9-A0(x4)/A9-A0(x8)/A8-A0(x16), and the address
sequence of burst data is defined by the Burst Type. A READ command may be applied to any
active bank, so the row precharge time (tRP) can be hidden behind continuous output data by
interleaving the multiple banks. When A10 is high at a READ command, the auto-precharge
(READA) is performed. Any command(READ,WRITE,PRE,ACT) to the same bank is inhibited till
the internal precharge is complete. The internal precharge starts at BL/2 after READA. The next
ACT command can be issued after (BL/2+tRP) from the previous READA.
READ
Multi Bank Interleaving READ (BL=8, CL=2)
/CLK
CLK
Command
A0-9,11
A10
BA0,1
DQ
ACT
Xa
Xa
00
READ
Y
0
00
READ
Y
0
10
ACT
Xb
Xb
10
PRE
0
00
tRCD
/CAS latency
Burst Length
DQS
Qa0
Qa1
Qa2
Qa3
Qa4
Qa5
Qa6
Qa7
Qb0
Qb1
Qb2
Qb3
Qb4
Qb5
Qb7
Qb8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M2S28D30ATP-75 | 128M Double Data Rate Synchronous DRAM |
| M2S28D40ATP | 128M Double Data Rate Synchronous DRAM |
| M2S28D40ATP-10 | 128M Double Data Rate Synchronous DRAM |
| M2S28D40ATP-75 | 128M Double Data Rate Synchronous DRAM |
| M2V28S20TP-6 | 128 x 64 pixel format, LED Backlight available |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M2S28D30ATP-75 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM |
| M2S28D40ATP | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM |
| M2S28D40ATP-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM |
| M2S28D40ATP-75 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:128M Double Data Rate Synchronous DRAM |
| M2S28UC | 功能描述:閃存 MACH2 2.5" SATA SSD 8GB COM TEMP RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。