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參數(shù)資料
| 型號： | M29W800FB9N3F |
| 廠商： | NUMONYX |
| 元件分類： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件頁數(shù)： | 1/49頁 |
| 文件大?。?/td> | 936K |
| 代理商： | M29W800FB9N3F |
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Preliminary Data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
March 2008
Rev 3
1/49
1
M29W800FT
M29W800FB
8 Mbit (1 Mbit × 8 or 512 Kbit × 16, boot block)
3 V supply Flash memory
Features
■ Supply voltage
–VCC = 2.7 V to 3.6 V for program, erase and
read
■ Access time: 70 ns, 90 ns (only available for
the known good die version)
■ Programming time
– 10 s per byte/word typical
■ 19 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter blocks and 16 main blocks
■ Program/erase controller
– Embedded byte/word program algorithms
■ Erase suspend and resume modes
– Read and program another block during
erase suspend
■ Unlock bypass program command
– Faster production/batch programming
■ Temporary block unprotection mode
■ Common Flash interface
– 64-bit security code
■ Low power consumption
– Standby and automatic standby
■ 100,000 program/erase cycles per block
■ Electronic signature
– Manufacturer code: 0020h
– Top device code M29W800FT: 22D7h
– Bottom device code M29W800FB: 225Bh
■ ECOPACK packages available
■ Automotive device grade 3:
– Temperature: –40 to 125 °C
– Automotive grade certified
TSOP48 (N)
12 × 20 mm
FBGA
TFBGA48 (ZA)
6 x 8 mm
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