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參數(shù)資料
| 型號(hào)： | BSS8402DW |
| 廠商： | Diodes Inc. |
| 英文描述： | COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 中文描述： | 互補(bǔ)對(duì)增強(qiáng)型場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 4/5頁(yè) |
| 文件大?。?/td> | 138K |
| 代理商： | BSS8402DW |
DS30380 Rev. 4 - 2
4 of 5
BSS8402DW
www.diodes.com
T
C
U
D
O
R
P
W
E
N
P-CHANNEL - BSS84 SECTION
-0.0
-1.0
-0.8
-0.6
-0.4
-0.2
0
-2
-3
-4
-1
-8
-7
-6
-5
I
D
V
, GATE-TO-SOURCE VOLTAGE (V)
Fig. 8, Drain Current vs. Gate Source Voltage
GS
T = -55
°
C
T = 25
°
C
T = 125
°
C
0
600
500
400
300
200
100
0
2
1
5
4
3
I
D
V
, DRAIN SOURCE (V)
Fig. 7, Drain Source Current vs.
Drain Source Voltage
DS
T = 25
°
C
V
= 5V
GS
4.5V
3.5V
3.0V
2.5V
0
3
6
9
12
15
-50
-25
0
25
50
125
100
75
150
T
,
JUNCTION TEMPERATURE (°C)
J
Fig. 10, On-Resistance vs. Junction Temperature
V
I = -0.13A
= -10V
GS
0
1
2
4
5
3
6
8
7
10
9
0
1
2
3
4
5
V
, GATE TO SOURCE (V)
GS
Fig. 9, On Resistance vs. Gate Source Voltage
T
= 25
°
C
A
T = 125
°
C
0.0
5.0
10.0
-0.0
-0.2
-0.4
-0.6
-0.8
1.0
I , DRAIN CURRENT (A)
Fig. 11, On-Resistance vs. Drain Current
15.0
20.0
25.0
V
= -8V
GS
V
= -10V
GS
V
= -3V
GS
V
= -3.5V
GS
V
= -4V
GS
V
= -4.5V
GS
V
= -6V
GS
V
= -5V
GS
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| BSS8402DW _R1 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BSS8402DW_ R2 _00001 | 制造商:PanJit Touch Screens 功能描述: |
| BSS8402DW_08 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| BSS8402DW_1 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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