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| 型號(hào)： | M12L16161A-7T |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 512K x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 為512k × 16Bit的X 2Banks同步DRAM |
| 文件頁(yè)數(shù)： | 4/27頁(yè) |
| 文件大小： | 566K |
| 代理商： | M12L16161A-7T |
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M12L16161A
Elite Semiconductor Memory Technology Inc.
P.
4
Publication Date : J an. 2000
Revision : 1.3u
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
C
°
V
IH
(min)/V
IL
(max)=2.0V/0.8V)
Version
Parameter
Symbol
Test Condition
CAS
Latency-4.3 -5 -5.5 -6
-7
-8
Unit Note
Operating Current
(One Bank Active)
I
CC1
Burst Length = 1
t
RC
≥
t
RC
(min),
t
CC
≥
t
CC
(min), I
OL
= 0mA
250 230 210 190 160 140 mA 1
I
CC2
P
CKE
≤
V
IL
(max),
t
CC
=15ns
2
mA
Precharge Standby
Current in power-down
mode
I
CC2
PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max),
t
CC
=
∞
2
I
CC2
N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CC
=15ns
Input signals are changed one time during 30ns
30
mA
Precharge Standby
Current in non power-
down mode
I
CC2
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max),
t
CC
=
∞
Input signals are stable
2
mA
I
CC3
P
CKE
≤
V
IL
(max),
t
CC
=15ns
10
Active Standby Current
in power-down mode
I
CC3
PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max),
t
CC
=
∞
CKE
≥
V
IH
(min), CS
≥
V
IH
(min),
t
CC
=15ns
Input signals are changed one time during 30ns
10
mA
I
CC3
N
40
mA
Active Standby Current
in non power-down
mode
(One Bank Active)
I
CC3
NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max),
t
CC
=
∞
Input signals are stable
10
mA
3
270 250 230 210 180 160mA
1
Operating Current
(Burst Mode)
I
CC
4
I
OL
= 0Ma, Page Burst
All Band Activated,
t
CCD
=
t
CCD
(min)
2
270 250 230 210 180 160
Refresh Current
I
CC
5
t
RC
≥
t
RC
(min)
270 250 230 210 180 160 mA
2
Self Refresh Current
I
CC
6
CKE
≤
0.2V
1
mA
Note:
1.Measured with outputs open. Addresses are changed only one time during
t
CC
(min).
2.Refresh period is 32ms. Addresses are changed only one time during
t
CC
(min).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12L16161A-7TG | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-7TG2Q | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks |
| M12L16161A-7TIG | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161A-8T | 制造商:ESMT 制造商全稱(chēng):Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12L16161C6TAA | 制造商:ELITE 功能描述:New |
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