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參數(shù)資料
| 型號： | M11L416256SA |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256 K x 16 DRAM EDO PAGE MODE |
| 中文描述： | 256畝× 16的DRAM EDO公司頁面模式 |
| 文件頁數(shù)： | 5/16頁 |
| 文件大小： | 280K |
| 代理商： | M11L416256SA |
EliteMT
M11L416256SA
(Continued)
-35
PARAMETER
SYMBOL
MIN
MAX
UNIT
NOTES
Read Command Hold Time Reference to
CAS
t
RCH
0
ns
9,15,19
Read Command Hold Time Reference to
RAS
t
RRH
0
ns
9
CAS
to Output in Low-Z
t
CLZ
3
ns
20
Output Buffer Turn-off Delay From
CAS
or
RAS
t
OFF1
3
15
ns
10,17,20
Output Buffer Turn-off to
OE
t
OFF2
8
ns
17,26
Write Command Setup Time
Write Command Hold Time
t
WCS
t
WCH
0
5
ns
11,15,18
ns
15,25
Write Command Hold Time(Reference to
RAS
)
t
WCR
30
ns
15
Write Command Pulse Width
t
WP
5
ns
15
Write Command to
RAS
Lead Time
t
RWL
9
ns
15
Write Command to
CAS
Lead Time
t
CWL
7
ns
15,19
Data-in Setup Time
t
DS
t
DH
0
5
ns
12,20
Data-in Hold Time
ns
12,20
Data-in Hold Time (Reference to
RAS
)
t
DHR
30
ns
RAS
to
WE
Delay Time
t
RWD
51
ns
11
Column Address to
WE
Delay Time
t
AWD
34
ns
11
CAS
to
WE
Delay Time
t
CWD
26
ns
11,18
Transition Time (rise or fall)
t
T
t
REF
2.5
50
8
ns
2,3
Refresh Period (512 cycles)
ms
RAS
to
CAS
Precharge Time
t
RPC
10
ns
CAS
Setup Time(CBR REFRESH)
t
CSR
10
ns
1,18
CAS
Hold Time(CBR REFRESH)
t
CHR
10
ns
1,19
OE
Hold Time From
WE
During
Read-Mode-Write Cycle
t
OEH
4
ns
16
OE
Low to
CAS
High Setup Time
t
OES
4
ns
OE
High Hold Time From
CAS
High
t
OEHC
2
ns
OE
Precharge Time
t
OEP
2
ns
OE
Setup Prior to
RAS
During Hidden
Refresh Cycle
t
ORD
0
ns
Last
CAS
Going Low to First
CAS
Returning High
t
CLCH
5
ns
21
Data Output Hold After
CAS
Returning Low
t
COH
3
ns
Output Disable Delay From
WE
t
WHZ
3
7
ns
μ
s
Self Refresh
RAS
Low Pulse width
t
RASS
100
27,28
Self Refresh
RAS
High Precharge Time
t
RPS
65
ns
27,28
Self Refresh
CAS
Hold Time
t
CHS
-50
ns
27,28
Elite Memory Technology Inc
Publication Date
:
Aug. 2005
Revision
:
1.4
5/16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M11L416256SA-35JP | 256 K x 16 DRAM EDO PAGE MODE |
| M11L416256SA-35TG | 256 K x 16 DRAM EDO PAGE MODE |
| M11L416256SA | 256 K x 16 DRAM EDO PAGE MODE |
| M11L416256SA-35JP | 256 K x 16 DRAM EDO PAGE MODE |
| M11L416256SA-35TG | 256 K x 16 DRAM EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M11L416256SA-35JP | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M11L416256SA-35TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M-11-LID-PLATED | 功能描述:罩類、盒類及殼類產(chǎn)品 PLTD LID FOR M11 RoHS:否 制造商:Bud Industries 產(chǎn)品:Boxes 外部深度:6.35 mm 外部寬度:6.35 mm 外部高度:2.56 mm NEMA 額定值: IP 等級: 材料:Acrylonitrile Butadiene Styrene (ABS) 顏色:Red |
| M11LRGSP | 制造商:Hubbell Wiring Device-Kellems 功能描述:MARINE SWITCH, SPST ON/OFF, LIGHTED |
| M11LRSP | 制造商:Hubbell Wiring Device-Kellems 功能描述:MARINE SWITCH, SPST ON/OFF, LIGHTED |
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