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參數(shù)資料
| 型號(hào)： | M11L416256SA |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256 K x 16 DRAM EDO PAGE MODE |
| 中文描述： | 256畝× 16的DRAM EDO公司頁面模式 |
| 文件頁數(shù)： | 4/16頁 |
| 文件大小： | 280K |
| 代理商： | M11L416256SA |
EliteMT
M11L416256SA
CAPACITANCE
(Ta = 25
, V
CC
= 3.3V
10%)
C
°
±
PARAMETER
SYMBOL
TYP
MAX
UNIT
Input Capacitance (address)
C
I1
-
5
pF
Input Capacitance (
RAS
,
CASH
,
CASL
, WE ,
OE
)
C
I2
-
7
pF
Output capacitance (I/O0~I/O15)
C
I / O
-
10
pF
AC ELECTRICAL CHARACTERISTICS
(Ta = 0 to 70
, V
CC
=3.3V
C
°
±
10%, V
SS
= 0V) (note 14)
Test Conditions
Input timing reference levels : 0.8V, 2.0V
Output reference level : V
OL
= 0.8V, V
OH
=2.0V
Output Load : 2TTL gate + CL (50pF)
Assumed t
T
= 2ns
-35
PARAMETER
SYMBOL
MIN
MAX
UNIT
NOTES
Read or Write Cycle Time
t
RC
65
ns
Read Write Cycle Time
t
RWC
95
ns
EDO-Page-Mode Read or Write Cycle
Time
t
PC
14
ns
22
EDO-Page-Mode Read-Write Cycle
Time
t
PCM
42
ns
22
Access Time From
RAS
t
RAC
35
ns
4
Access Time From
CAS
t
CAC
10
ns
5,20
Access Time From
OE
t
OAC
10
ns
13,20
Access Time From Column Address
t
AA
18
ns
Access Time From
CAS
Precharge
t
ACP
20
ns
20
RAS
Pulse Width
t
RAS
35
10K
ns
RAS
Pulse Width (EDO Page Mode)
t
RASC
35
100K
ns
RAS
Hold Time
t
RSH
10
ns
25
RAS
Precharge Time
t
RP
25
ns
CAS
Pulse Width
t
CAS
5
10K
ns
24
CAS
Hold Time
t
CSH
30
ns
19
CAS
Precharge Time
t
CP
5
ns
6,23
RAS
to
CAS
Delay Time
t
RCD
10
25
ns
7,18
CAS
to
RAS
Precharge Time
t
CRP
5
ns
19
Row Address Setup Time
t
ASR
t
RAH
0
5
ns
ns
Row Address Hold Time
RAS
to Column Address Delay Time
t
RAD
8
17
ns
8
Column Address Setup Time
t
ASC
t
CAH
0
5
ns
ns
18
18
Column Address Hold Time
Column Address Hold Time (Reference
to
RAS
)
t
AR
30
ns
Column Address to
RAS
Lead Time
t
RAL
18
ns
Read Command Setup Time
t
RCS
0
15,18
Elite Memory Technology Inc
Publication Date
:
Aug. 2005
Revision
:
1.4
4/16
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M11L416256SA-35JP | 256 K x 16 DRAM EDO PAGE MODE |
| M11L416256SA-35TG | 256 K x 16 DRAM EDO PAGE MODE |
| M11L416256SA | 256 K x 16 DRAM EDO PAGE MODE |
| M11L416256SA-35JP | 256 K x 16 DRAM EDO PAGE MODE |
| M11L416256SA-35TG | 256 K x 16 DRAM EDO PAGE MODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M11L416256SA-35JP | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256 K x 16 DRAM EDO PAGE MODE |
| M11L416256SA-35TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:256 K x 16 DRAM EDO PAGE MODE |
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