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| 型號(hào)： | LXE16350X |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | CON-THT OTHER 14 PIN R/A |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 88K |
| 代理商： | LXE16350X |
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LXE16350X
THERMAL CHARACTERISTICS
Note
1.
See “Mounting recommendations in the General part of handbook SC15”
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common-emitter class AB amplifier (note 1).
Note
1.
The test circuit is split into 2 independent halves each being 30
×
40 mm in size.
List of components
(see Fig 4)
.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 100
°
C
note 1
MAX.
UNIT
R
th j-mb
R
th mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
1.7
0.2
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
V
CB
= 20 V; I
E
= 0
V
CB
= 40 V; I
E
= 0
V
CE
= 30 V; R
BE
= 220
V
CE
= 20 V; I
B
= 0
V
EB
= 1.5 V; I
C
= 0
V
CE
= 3 V; I
C
= 3 A
15
3
30
30
30
300
100
mA
mA
mA
mA
μ
A
I
CER
I
CEO
I
EBO
h
FE
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
MODE OF
OPERATION
f
(GHz)
V
CE
(V)
I
CQ
(A)
P
L1
(W)
≥
32
typ. 35
G
po
(dB)
≥
9
typ. 10
Z
i
; Z
L
(
)
Class AB (CW)
1.65
24
0.3
see Figs 8 and 9
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
L1
5 turns 0.5 mm diameter copper
wire with ferrite bead
5 turns 0.5 mm diameter copper
wire
DC blocking chip capacitor
trimmer capacitor
feedthrough bypass capacitor
int. dia. 2 mm
L2
int. dia. 2 mm
C1, C4
C2, C3
C5, C6
100 pF
0.5 to 5 pF
1500 pF
Tekelec
Erie, ref. 1250-003
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