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參數(shù)資料
| 型號： | LX5561LL |
| 廠商： | MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP |
| 元件分類： | 衰減器 |
| 英文描述： | InGaAs - E-Mode pHEMT Low Noise Amplifier |
| 中文描述： | 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER |
| 封裝： | 2X2 MM, ROHS COMPLIANT, LL, MLPQ, 12 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 189K |
| 代理商： | LX5561LL |
LX5561
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
Copyright
2006
Rev. 1.0, 2006-12-20
W
M
.
C
InGaAs – E-Mode pHEMT Low Noise Amplifier
TM
D E S C R I P T I O N
The LX5561 is a low noise amplifier
(LNA) for WLAN applications in the
2.4-2.5 GHz frequency range. This
LNA is manufactured with an InGaAs
Enhancement mode pseudomorphic
HEMT (E-pHEMT) process.
It operates with a single positive
voltage supply of 3.3V, with noise
figure of 1.5dB while maintaining
input third order intercept point(IIP3)
of up to +6.5dBm.
The LNA is implemented with bias
circuit and input/output matching circuit
on chip, resulting in simple external
circuit on board. In addition, the on-
chip bias circuit provides stable
performance of gain, NF and current for
voltage variation compared to a general
resistor-network bias circuit.
The LX5561 is available in a 12-pin
2mm x 2mm micro-lead package
(MLPQ-12L).
B L O C K D I A G R A M
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
K E Y F E A T U R E S
0.5μm InGaAs E-mode pHEMT
2.4 – 2.5GHz Operation
Single 3.3V Supply
Gain ~ 13.0dB
Noise Figure ~ 1.5dB
Input IP3 ~ +6.5dBm
Input P1dB ~ +2.5dBm
On-Chip Bias Circuit
On-Chip Input/Output Match
2mm x 2mm MLPQ-12L
Low Profile 0.5mm
A P P L I C A T I O N S
Wireless LAN 802.11b/g
WiMax
P R O D U C T H I G H L I G H T
P A C K A G E O R D E R I N F O
LL
12 pin
RoHS Compliant / Pb-free
LX5561LL
Plastic MLPQ
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5561LL-TR)
L
X
5
5
6
1
Match
Circuit
Output
Input
Vdd
Match
Input
Bias
RF
RF
Output
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