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參數(shù)資料
| 型號(hào)： | LX5506 |
| 廠商： | Microsemi Corporation |
| 英文描述： | InGaP HBT 4.5 - 6GHz Power Amplifier |
| 中文描述： | 的InGaP HBT 4.5 - 6GHz的功率放大器 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大小： | 509K |
| 代理商： | LX5506 |
LX5506
P
RODUCTION
D
ATA
S
HEET
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
Copyright
2003
Rev. 1.2c, 2005-08-18
W
M
.
C
InGaP HBT 4.5 – 6GHz Power Amplifier
TM
A B S O L U T E M A X I M U M R A T I N G S
DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................600mA
Total Power Dissipation....................................................................................3W
RF Input Power.........................................................................................+15dBm
Maximum Junction Temperature (T
J
max) .................................................. 150°C
Operation Ambient Temperature.......................................................-40 to +85°C
Storage Temperature........................................................................-65 to +150°C
Peak Package Solder Reflow Temperature (40 second max. exposure)........260°C (+0, -5)
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
.
P A C K A G E P I N O U T
RF IN
VCC
N.C.
RF IN
V
V
V
RF OUT
N.C.
RF OUT
V
N.C.
* Pad is Ground
LQ
P
ACKAGE
(Bottom View)
V
N
N
V
*
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15 16
RoHS / Pb-free 100% Matte Tin Lead Finish
F U N C T I O N A L P I N D E S C R I P T I O N
Name
Description
RF IN
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first
stage.
VCC
Supply voltage for the bias reference and control circuits.
VB1
Bias current control voltage for the first stage.
VB2
Bias current control voltage for the second stage.
VB3
Bias current control voltage for the third stage.
RF OUT
RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking capacitor.
VC1
Power supply for the first stage amplifier.
VC2
Power supply for the second stage amplifier.
VC3
Power supply for the third stage amplifier.
GND
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.
These are unused pins and not connected to the device. They can be treated either as open pins or connected
to ground for better heat dissipation.
N.C.
P
A
C
K
A
G
E
D
A
T
A
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| LX5506B | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 4 6GHz Power Amplifier |
| LX5506BLQ | 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 5.85GHZ 16MLPQ - Bulk |
| LX5506BLQ-TR | 制造商:Microsemi Corporation 功能描述:RF Amp Chip Single Power Amp 5.85GHz 16-Pin MLPQ EP T/R 制造商:Microsemi Corporation 功能描述:RF AMP CHIP SGL PWR AMP 5.85GHZ 16MLPQ - Tape and Reel |
| LX5506E | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:InGaP HBT 4 ?6GHz Power Amplifier |
| LX5506ELQ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Wireless LAN Power Amplifier |
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