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參數(shù)資料
| 型號(hào)： | LWE2015R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | LWE2015R |
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
LWE2015R
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
mb
= 25
°
C unless otherwise specified.
APPLICATION INFORMATION
Microwave performance up to T
mb
= 25
°
C in a common emitter class-A selective circuit; note 1.
Note
1.
Circuit consists of prematching circuit boards in combination with complementary input and output slug tuners.
SYMBOL
PARAMETER
CONDITIONS
T
j
= 75
°
C
MAX.
UNIT
R
th j-mb
thermal resistance from junction to mounting-base
12
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
≤
10
≤
10
UNIT
μ
A
μ
A
I
CBO
I
EBO
h
FE
C
cb
collector cut-off current
emitter cut-off current
DC current gain
collector-base capacitance
V
CB
= 25 V; I
E
= 0
V
EB
= 1.5 V; I
C
= 0
V
CE
= 5 V; I
C
= 230 mA
V
CB
= 16 V; V
EB
= 1.5 V;
I
E
= I
C
= 0; f = 1 MHz
V
CE
= 16 V; V
EB
= 1.5 V;
I
E
= I
C
= 0; f = 1 MHz
V
CB
= 10 V; V
EB
= 1 V;
I
C
= I
E
= 0; f = 1 MHz
40
2
pF
C
ce
collector-emitter capacitance
2
pF
C
eb
emitter-base capacitance
15
pF
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
C
(mA)
P
L1
(W)
≥
1.2
typ. 1.6
G
po
(dB)
≥
7.5
typ. 8.1
Z
i
(
)
Z
L
(
)
Class-A (CW)
2.3
16
250
3.5 + j11
6.4 + j2
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