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參數(shù)資料
| 型號： | LTE21025R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | C BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | METAL CERAMIC, SOT-440A, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 51K |
| 代理商： | LTE21025R |
1997 Feb 21
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE21025R
FEATURES
Diffused emitter ballasting resistors provide excellent
current sharing and withstanding a high VSWR
Self-aligned process entirely ion implanted
Gold metallization realizes very stable characteristics
and excellent lifetime
Input matching cell improves input impedance and
allows an easier design of wideband circuits.
APPLICATIONS
Common emitter class-A linear power amplifiers up
to 4.2 GHz.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT440A metal ceramic flange package with the emitter
connected to the flange.
PINNING - SOT440A
PIN
DESCRIPTION
1
2
3
collector
base
emitter connected to flange
Fig.1 Simplified outline and symbol.
Marking code
: 439
olumns
e
c
b
MAM131
3
1
2
Top view
QUICK REFERENCE DATA
RF performance up to T
mb
= 25
°
C in a common emitter class-A test circuit.
MODE OF OPERATION
f
(GHz)
V
CE
(V)
I
C
(mA)
P
L1
(W)
G
po
(dB)
Class-A (CW)
2.1
16
400
typ. 2.8
typ. 7.8
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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