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參數(shù)資料
| 型號： | LTE21015R |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN microwave power transistor |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 5/12頁 |
| 文件大小： | 71K |
| 代理商： | LTE21015R |
1997 Feb 19
5
Philips Semiconductors
Product specification
NPN microwave power transistor
LTE21015R
Fig.4 Narrowband test circuit.
Dimensions in mm.
Substrate: Teflon fibreglass.
Thickness: 0.8 mm.
Permittivity:
ε
r
= 2.55.
handbook, full pagewidth
20
10.5
4
2.2
1.4
10
4
6.5
1.5
5
7.5
5
4
16
3
8
8
output
50
input
50
MSA099
Fig.5 Load power as a function of source power.
V
CE
= 16 V; I
C
= 250 mA (regulated).
In narrowband test circuit as shown in Fig.4
(1) G
po
= 9.5 dB.
(2) P
L1
= 1.8 W.
handbook, halfpage
0
2
1
0
0.1
0.2
0.4
PS (W)
PL
(W)
0.3
MGL062
(1)
(2)
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| LTE21025R | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN microwave power transistor |
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