參數(shù)資料
型號: LTC5533EDE
廠商: LINEAR TECHNOLOGY CORP
元件分類: 衰減器
英文描述: 300MHz to 11GHz Precision Dual RF Power Detector
中文描述: 300 MHz - 11000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX
封裝: 4 X 3 MM, PLASTIC, MO-229, DFN, DE-12
文件頁數(shù): 8/12頁
文件大?。?/td> 253K
代理商: LTC5533EDE
LTC5533
8
5533f
V
CC1
, V
CC2
(Pins 1, 4):
Power Supply Voltage, 2.7V to 6V.
V
CC
should be bypassed appropriately with ceramic
capacitors.
V
OUT1
, V
OUT2
(Pins 2, 5):
Detector Outputs.
V
OS1
, V
OS2
(Pins 3, 6):
V
OUT
Offset Voltage Adjustments.
These pins adjust the starting V
OUT
voltage when no RF
signal is present. For V
OS
from 0V to 130mV, V
OUT
is
unaffected by V
OS
. For V
OS
> 130mV, V
OUT
is the sum of
V
OS
plus the detected RF signal.
SHDN1, SHDN2 (Pin 10, 7):
Shutdown Inputs. A logic low
on the SHDN pin places the corresponding detector in
shutdown mode. A logic high enables the detector. SHDN
has an internal 160k pulldown resistor to ensure that the
detector is shutdown when no SHDN input is applied. In
shutdown V
OUT
is connected to ground via a 280
resis-
tor. Channels can be shut down independently.
GND1, GND2 (Pins 11, 8):
Ground.
RF
IN1
, RF
IN2
(Pins 12, 9):
RF Input Voltage. Referenced
to V
CC
. A coupling capacitor must be used to connect to
the RF signal source. These pins have internal 500
terminations, Schottky diode detectors and peak detector
capacitors.
Exposed Pad (Pin13):
Ground.
BLOCK DIAGRA
PIU
+
+
5531 BD
25pF
V
OUT
GND
12pF TO 200pF
(DEPENDING ON
APPLICATION)
V
OS
BUFFER
500
500
RF DET
50
μ
A
50
μ
A
80k
BIAS
RF
SOURCE
RF
IN
V
CC
ONE CHANNEL
31k
24k
30k
30k
+
+
120mV
80k
SD
SD
SD
SD
SHDN
160k
180
100
(One Channel)
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