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| 型號： | LTC4213CDDB#TRPBF |
| 廠商： | Linear Technology |
| 文件頁數(shù)： | 6/20頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC CIRC BREAK ELEC 8-DFN |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 系列： | * |
| 類型： | * |
| 應(yīng)用： | * |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-WFDFN 裸露焊盤 |
| 供應(yīng)商設(shè)備封裝： | 8-DFN（3x2） |
| 包裝： | 帶卷 (TR) |
LTC4213
14
4213f
Operating temperature of 0° to 70°C.
RDSON @ 25°C = 100%
RDSON @ 0°C = 90%
RDSON @ 70°C = 120%
MOSFET resistance variation:
RDSON(NOM) = 15m 0.82 = 12.3m
RDSON(MAX) = 15m 1.333 0.93 1.2 = 15m 1.488
= 22.3m
RDSON(MIN) = 15m 0.667 0.80 0.90 = 15m 0.480
= 7.2m
VCB variation:
NOM VCB = 25mV = 100%
MIN VCB = 22.5mV = 90%
MAX VCB = 27.5mV = 110%
The current limits are:
ILIMIT(NOM) = 25mV/12.3m = 2.03A
ILIMIT(MIN) = 22.5mV/22.3m = 1.01A
ILIMIT(MAX) = 27.5mV/7.2m = 3.82A
For proper operation, the minimum current limit must
exceed the circuit maximum operating load current with
margin. So this system is suitable for operating load
current up to 1A. From this calculation, we can start with
the general rule for MOSFET RDSON by assuming maxi-
mum operating load current is roughly half of the
ILIMIT(NOM). Equation 7 shows the rule of thumb.
I
V
R
OPMAX
CB NOM
DSON NOM
=
()
()
2
7
Note that the RDSON(NOM) is at the LTC4213 nominal
operating VGSMAX rather than at typical vendor spec.
Table 1 gives the nominal operating VGSMAX at the
various operating VCC. From this table users can refer to
the MOSFET’s data sheet to obtain the RDSON(NOM) value.
Table 1. Nominal Operating VGSMAX for Typical Bias
Supply Voltage
VCC (V)
VGSMAX (V)
2.3
4.3
2.5
5.0
2.7
5.6
3.0
6.5
3.3
7.0
5.0
7.0
6.0
7.0
Load Supply Power-Up after Circuit Breaker Armed
Figure 4 shows a normal power-up sequence for the
circuit in Figure 1 where the VIN load supply power-up after
circuit breaker is armed. VCC is first powered up by an
auxiliary bias supply. VCC rises above 2.07V at time
point 1. VON exceeds 0.8V at time point 2. After a 60s
debounce delay, the GATE pin starts ramping up at time
point 3. The external MOSFET starts conducting at time
point 4. At time point 5, VGATE exceed VGSARM and the
circuit breaker is armed. After 50s (tREADY delay), READY
pulls high by an external resistor at time point 6. READY
signals the VIN load supply module to start its ramp. The
load supply begins soft-start ramp at time point 7. The load
supply ramp rate must be slow to prevent circuit breaker
tripping as in equation (8).
V
t
II
C
IN
OPMAX
LOAD
<
()
8
Where IOPMAX is the maximum operating current defined
by equation 7.
For illustration, VCB = 25mV and RDSON = 3.5m at the
nominal operating VGSMAX. The maximum operating
current is 3.5A (refer to equation 7). Assuming the load
can draw a current of 2A at power-up, there is a margin of
1.5A available for CLOAD of 100F and VIN ramp rate should
be <15V/ms. At time point 8, the current through the
MOSFET reduces after CLOAD is fully charged.
APPLICATIO S I FOR ATIO
WU
U
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