參數(shù)資料
型號: LTC3872ETS8
廠商: LINEAR TECHNOLOGY CORP
元件分類: 穩(wěn)壓器
英文描述: SWITCHING CONTROLLER, 650 kHz SWITCHING FREQ-MAX, PDSO8
封裝: 1 MM HEIGHT, PLASTIC, MO-193, TSOT-23, 8 PIN
文件頁數(shù): 2/20頁
文件大小: 261K
代理商: LTC3872ETS8
LTC3872
10
3872fa
result, some iterative calculation is normally required to
determine a reasonably accurate value. Since the controller
is using the MOSFET as both a switching and a sensing
element, care should be taken to ensure that the converter
is capable of delivering the required load current over all
operating conditions (line voltage and temperature), and
for the worst-case specications for VSENSE(MAX) and the
RDS(ON) of the MOSFET listed in the manufacturer’s data
sheet.
The power dissipated by the MOSFET in a boost converter
is:
P
I
D
RD
k
FET
OMAX
MAX
DS ON
MAX
T
=
+
()
1
2
ρ
.
()
V
I
D
Cf
O
OMAX
MAX
RSS
185
1
()
The rst term in the equation above represents the I2R
losses in the device, and the second term, the switching
losses. The constant, k = 1.7, is an empirical factor inversely
related to the gate drive current and has the dimension
of 1/current.
From a known power dissipated in the power MOSFET, its
junction temperature can be obtained using the following
formula:
TJ = TA + PFET RTH(JA)
The RTH(JA) to be used in this equation normally includes
the RTH(JC) for the device plus the thermal resistance from
the case to the ambient temperature (RTH(CA)). This value
of TJ can then be compared to the original, assumed value
used in the iterative calculation process.
Output Diode Selection
To maximize efciency, a fast switching diode with low
forward drop and low reverse leakage is desired. The output
diode in a boost converter conducts current during the
switch off-time. The peak reverse voltage that the diode
must withstand is equal to the regulator output voltage.
The average forward current in normal operation is equal
to the output current, and the peak current is equal to the
peak inductor current.
II
I
D
D PEAK
L PEAK
OMAX
MAX
()
== +
1
21
χ
The power dissipated by the diode is:
PD = IO(MAX) VD
and the diode junction temperature is:
TJ = TA + PD RTH(JA)
The RTH(JA) to be used in this equation normally includes
the RTH(JC) for the device plus the thermal resistance from
the board to the ambient temperature in the enclosure.
Remember to keep the diode lead lengths short and to
observe proper switch-node layout (see Board Layout
Checklist) to avoid excessive ringing and increased dis-
sipation.
Output Capacitor Selection
Contributions of ESR (equivalent series resistance), ESL
(equivalent series inductance) and the bulk capacitance
must be considered when choosing the correct component
for a given output ripple voltage. The effects of these three
parameters (ESR, ESL and bulk C) on the output voltage
ripple waveform are illustrated in Figure 5e for a typical
boost converter.
The choice of component(s) begins with the maximum
acceptable ripple voltage (expressed as a percentage of
the output voltage), and how this ripple should be divided
between the ESR step and the charging/discharging
ΔV.
For the purpose of simplicity we will choose 2% for the
maximum output ripple, to be divided equally between the
ESR step and the charging/discharging
ΔV. This percent-
age ripple will change, depending on the requirements
of the application, and the equations provided below can
easily be modied.
For a 1% contribution to the total ripple voltage, the ESR
of the output capacitor can be determined using the fol-
lowing equation:
ESR
V
I
COUT
O
IN PEAK
001
.
()
APPLICATIO S I FOR ATIO
WU
U
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