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參數(shù)資料
| 型號(hào)： | LTC3783IDHD |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 1 A SWITCHING CONTROLLER, 1000 kHz SWITCHING FREQ-MAX, PDSO16 |
| 封裝： | 5 X 4MM, PLASTIC, MO-229WJGD-2, DFN-16 |
| 文件頁數(shù)： | 3/24頁 |
| 文件大?。?/td> | 250K |
| 代理商： | LTC3783IDHD |
LTC3783
11
3783fb
OPERATION
INTVCC Regulator Bypassing and Operation
An internal, P-channel low dropout voltage regulator pro-
duces the 7V supply which powers the gate drivers and
logic circuitry within the LTC3783 as shown in Figure 3.
The INTVCC regulator can supply up to 50mA and must be
bypassed to ground immediately adjacent to the IC pins
with a minimum of 4.7μF low ESR or ceramic capacitor.
Good bypassing is necessary to supply the high transient
currents required by the MOSFET gate driver.
For input voltages that don’t exceed 8V (the absolute
maximum rating for INTVCC is 9V), the internal low dropout
regulator in the LTC3783 is redundant and the INTVCC pin
can be shorted directly to the VIN pin. With the INTVCC
pin shorted to VIN, however, the divider that programs the
regulated INTVCCvoltagewilldraw15μAfromtheinputsup-
ply, even in shutdown mode. For applications that require
the lowest shutdown mode input supply current, do not
connect the INTVCC pin to VIN. Regardless of whether the
INTVCC pin is shorted to VIN or not, it is always necessary
to have the driver circuitry bypassed with a 4.7μF low ESR
ceramic capacitor to ground immediately adjacent to the
INTVCC and GND pins.
In an actual application, most of the IC supply current is
used to drive the gate capacitance of the power MOSFET.
As a result, high input voltage applications in which a
large power MOSFET is being driven at high frequencies
can cause the LTC3783 to exceed its maximum junction
temperature rating. The junction temperature can be
estimated using the following equations:
IQ(TOT) = IQ + f QG
PIC = VIN (IQ + f QG)
TJ = TA + PIC θJA
The total quiescent current IQ(TOT) consists of the static
supply current (IQ) and the current required to charge and
discharge the gate of the power MOSFET. The 16-lead FE
package has a thermal resistance of
θJA = 38°C/W and
the DHD package has an
θJA = 43°C/W
As an example, consider a power supply with VIN = 12V
and VOUT = 25V at IOUT = 1A. The switching frequency is
300kHz, and the maximum ambient temperature is 70°C.
The power MOSFET chosen is the Si7884DP, which has a
maximum RDS(ON) of 10mΩ (at room temperature) and
–
+
1.230V
R2
R1
P-CH
7V
DRIVER
GATE
CVCC
4.7μF
X5R
CIN
INPUT
SUPPLY
6V TO 36V
GND
PLACE AS CLOSE AS
POSSIBLE TO DEVICE PINS
M1
3783 F03
INTVCC
VIN
GND
LOGIC
6V-RATED
POWER
MOSFET
Figure 3. Bypassing the LDO Regulator and Gate Driver Supply
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