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參數(shù)資料
| 型號： | LT3485EDD-0#TRPBF |
| 廠商： | LINEAR TECHNOLOGY CORP |
| 元件分類： | 模擬信號調(diào)理 |
| 英文描述： | SPECIALTY ANALOG CIRCUIT, PDSO10 |
| 封裝： | 3 X 3 MM, LEAD FREE, PLASTIC, MO-229WEED-2, DFN-10 |
| 文件頁數(shù)： | 4/20頁 |
| 文件大?。?/td> | 339K |
| 代理商： | LT3485EDD-0#TRPBF |
LT3485-0/LT3485-1/
LT3485-2/LT3485-3
12
34850123fb
APPLICATIO S I FOR ATIO
WU
U
The peak current of the diode is simply:
I=
2
N
LT3485-3
I=
1.4
N
LT3485-0
PK-SEC
()
(
))
()
I=
1
N
LT3485-2
I=
0.7
N
LT3485-
PK-SEC
1
()
For the circuit of Figure 8 with VBAT of 5V, VPK-R is 371V
and IPK-SEC is 137mA. The GSD2004S dual silicon diode
is recommended for most LT3485-0/LT3485-1/LT3485-
2/LT3485-3 applications. Another option is to use the
BAV23S dual silicon diodes. Table 3 shows the various
diodes and relevant specifications. Use the appropriate
number of diodes to achieve the necessary reverse break-
down voltage.
IGBT Drive
The IGBT is a high current switch for the 100A+ current
through the photoflash lamp. To create a redeye effect or
to adjust the light output, the lamp current needs to be
stopped, or quenched, with an IGBT before discharging
the photoflash capacitor fully. The IGBT device also con-
trols the 4kV trigger pulse required to ionize the xenon gas
in the photoflash lamp. Figure 5 is a schematic of a fully
functional photoflash application with the LT3485 serving
as the IGBT drive. An IGBT drive charges the gate capaci-
tance to start the flash. The IGBT drive does not need to
pull-up the gate fast because of the inherently slow nature
of the IGBT. A rise time of 2
s is sufficient to charge the
gate of the IGBT and create a trigger pulse. With slower
rise times, the trigger circuitry will not have a fast enough
edge to create the required 4kV pulse. The fall time of the
IGBT drive is critical to the safe operation of the IGBT. The
IGBT gate is a network of resistors and capacitors, as
shown in Figure 6. When the gate terminal is pulled low,
Table 3. Recommended Output Diodes
MAX REVERSE VOLTAGE
MAX FORWARD CONTINUOUS CURRENT
CAPACITANCE
PART
(V)
(mA)
(pF)
VENDOR
GSD2004S
2x300
225
5
Vishay
(Dual Diode)
(402) 563-6866
www.vishay.com
BAV23S
2x250
225
5
Philips Semiconductor
(Dual Diode)
(800) 234-7381
www.philips.com
MMBD3004S
2x350
225
5
Diodes Inc
(Dual Diode)
(816) 251-8800
www.diodes.com
Figure 5. Complete Xenon Circuit
LT3485-0
IGBTOUT
IGBTIN
VIN
IGBTPWR
GND
VMONT
VBAT
SW
4.7
F
1:10.2
VBAT
2 AA OR
1 TO 2 Li-Ion
0.22
F
VCC
5V
320V
TO
MICRO
1
T
C
A
2
3
1
2
4
5
3485 F05
150
F
PHOTOFLASH
CAPACITOR
2.2
F
600V
1M
CHARGE
DONE
TRIGGER
FLASHLAMP
IGBT
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PDF描述 |
|---|---|
| LT3485EDD-0#TR | SPECIALTY ANALOG CIRCUIT, PDSO10 |
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| LT3494EDDB#PBF | 0.25 A SWITCHING REGULATOR, PDSO8 |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LT3485EDD-1 | 制造商:LINER 制造商全稱:Linear Technology 功能描述:Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive |
| LT3485EDD-1#PBF | 功能描述:IC CHARGER PHOTOFLASH 10-DFN RoHS:是 類別:集成電路 (IC) >> PMIC - 電源管理 - 專用 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 應(yīng)用:手持/移動設(shè)備 電流 - 電源:- 電源電壓:3 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:14-WFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:14-LLP-EP（4x4） 包裝:Digi-Reel® 配用:LP3905SD-30EV-ND - BOARD EVALUATION LP3905SD-30 其它名稱:LP3905SD-30DKR |
| LT3485EDD-1#TRPBF | 功能描述:IC CHARGER PHOTOFLASH 10-DFN RoHS:是 類別:集成電路 (IC) >> PMIC - 電源管理 - 專用 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 應(yīng)用:手持/移動設(shè)備 電流 - 電源:- 電源電壓:3 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:14-WFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:14-LLP-EP（4x4） 包裝:Digi-Reel® 配用:LP3905SD-30EV-ND - BOARD EVALUATION LP3905SD-30 其它名稱:LP3905SD-30DKR |
| LT3485EDD-2 | 制造商:LINER 制造商全稱:Linear Technology 功能描述:Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive |
| LT3485EDD-2#PBF | 功能描述:IC CHARGER PHOTOFLASH 10-DFN RoHS:是 類別:集成電路 (IC) >> PMIC - 電源管理 - 專用 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 應(yīng)用:手持/移動設(shè)備 電流 - 電源:- 電源電壓:3 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:14-WFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:14-LLP-EP（4x4） 包裝:Digi-Reel® 配用:LP3905SD-30EV-ND - BOARD EVALUATION LP3905SD-30 其它名稱:LP3905SD-30DKR |
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