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參數(shù)資料
| 型號(hào)： | LPC660IN |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 運(yùn)算放大器 |
| 英文描述： | Low Power CMOS Quad Operational Amplifier |
| 中文描述： | QUAD OP-AMP, 6000 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDIP14 |
| 封裝： | PLASTIC, DIP-14 |
| 文件頁(yè)數(shù)： | 5/17頁(yè) |
| 文件大?。?/td> | 603K |
| 代理商： | LPC660IN |
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AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
= 25C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5, and R
L
1M unless otherwise specified.
Parameter
Conditions
Typ
LPC660AM
LPC660AMJ/883
Limit
(Notes 4, 8)
0.07
0.04
LPC660AI
LPC660I
Units
Limit
(Note 4)
0.07
0.05
Limit
(Note 4)
0.05
0.03
Slew Rate
(Note 6)
0.11
V/μs
min
MHz
Deg
dB
dB
Gain-Bandwidth Product
Phase Margin
Gain Margin
Amp-to-Amp Isolation
Input Referred Voltage Noise
0.35
50
17
130
42
(Note 7)
F = 1 kHz
Input Referred Current Noise
F = 1 kHz
0.0002
Total Harmonic Distortion
F = 1 kHz, A
V
= 10
R
L
= 100 k
, V
O
= 8 V
PP
0.01
%
Note 1:
Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts
can result in exceeding the maximum allowed junction temperature of 150C. Output currents in excess of
±
30 mA over long term may adversely affect reliability.
Note 2:
The maximum power dissipation is a function of T
J(max)
,
θ
JA
and T
A
. The maximum allowable power dissipation at any ambient temperature is P
D
=
(T
J(max)
–T
A
)
θ
JA
.
Note 3:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is in-
tended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 4:
Limits are guaranteed by testing or correlation.
Note 5:
V
+
= 15V, V
CM
= 7.5V and R
L
connected to 7.5V. For Sourcing tests, 7.5V
≤
V
O
≤
11.5V. For Sinking tests, 2.5V
≤
V
O
≤
7.5V.
Note 6:
V
+
= 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.
Note 7:
Input referred. V
+
= 15V and R
L
= 100 k
connected to V
+
/2. Each amp excited in turn with 1 kHz to produce V
O
= 13 V
PP
.
Note 8:
A military RETS electrical test specification is available on request. At the time of printing, the LPC660AMJ/883 RETS specification complied fully with the
boldface
limits in this column. The LPC660AMJ/883 may also be procured to a Standard Military Drawing specification.
Note 9:
For operating at elevated temperatures, the device must be derated based on the thermal resistance
θ
JA
with P
D
= (T
J
–T
A
)/
θ
JA
.
Note 10:
All numbers apply for packages soldered directly into a PC board.
Note 11:
Do not connect output to V
+
when V
+
is greater than 13V or reliability may be adversely affected.
Typical Performance Characteristics
V
S
=
±
7.5V, T
A
= 25C unless otherwise specified
Supply Current
vs Supply Voltage
DS010547-27
Input Bias Current
vs Temperature
DS010547-28
Common-Mode Voltage
Range vs Temperature
DS010547-29
www.national.com
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LPC660 | Low Power CMOS Quad Operational Amplifier |
| LPC660AIM | Low Power CMOS Quad Operational Amplifier |
| LPC660AIN | Low Power CMOS Quad Operational Amplifier |
| LPC660AMD | Low Power CMOS Quad Operational Amplifier |
| LPC661AIM | Low Power CMOS Operational Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LPC661 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Low Power CMOS Operational Amplifier |
| LPC661AIM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| LPC661AIMX | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| LPC661AIN | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Low Power CMOS Operational Amplifier |
| LPC661AMN | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Low Power CMOS Operational Amplifier |
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