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參數(shù)資料
| 型號(hào)： | LPC660IN |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 運(yùn)算放大器 |
| 英文描述： | Low Power CMOS Quad Operational Amplifier |
| 中文描述： | QUAD OP-AMP, 6000 uV OFFSET-MAX, 0.35 MHz BAND WIDTH, PDIP14 |
| 封裝： | PLASTIC, DIP-14 |
| 文件頁數(shù)： | 3/17頁 |
| 文件大小： | 603K |
| 代理商： | LPC660IN |
Absolute Maximum Ratings
(Note 3)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Differential Input Voltage
Supply Voltage (V
+
V
)
Output Short Circuit to V
+
Output Short Circuit to V
Lead Temperature
(Soldering, 10 sec.)
Storage Temp. Range
Junction Temperature (Note 2)
ESD Rating
(C = 100 pF, R = 1.5 k
)
Power Dissipation
Current at Input Pin
Current at Output Pin
±
Supply Voltage
16V
(Note 11)
(Note 1)
260C
65C to +150C
150C
1000V
(Note 2)
±
5 mA
±
18 mA
Voltage at Input/Output Pin
Current at Power Supply Pin
(V
+
) + 0.3V, (V
) 0.3V
35 mA
Operating Ratings
(Note 3)
Temperature Range
LPC660AM
LPC660AI
LPC660I
Supply Range
Power Dissipation
Thermal Resistance (
θ
JA
), (Note 10)
14-Pin Ceramic DIP
14-Pin Molded DIP
14-Pin SO
14-Pin Side Brazed Ceramic DIP
55C
≤
T
J
≤
+125C
40C
≤
T
J
≤
+85C
40C
≤
T
J
≤
+85C
4.75V to 15.5V
(Note 9)
90C/W
85C/W
115C/W
90C/W
DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
= 25C.
Boldface
limits apply at the temperature extremes. V
+
= 5V, V
= 0V, V
CM
= 1.5V, V
O
= 2.5V, and R
L
1M unless otherwise specified.
Parameter
Conditions
Typ
LPC660AM
LPC660AMJ/883
Limit
(Notes 4, 8)
3
3.5
LPC660AI
LPC660I
Units
Limit
(Note 4)
3
3.3
Limit
(Note 4)
6
6.3
Input Offset Voltage
1
mV
max
μV/C
Input Offset Voltage
Average Drift
Input Bias Current
1.3
0.002
20
100
20
100
pA
max
pA
max
Tera
dB
min
dB
min
dB
min
V
max
V
min
V/mV
min
V/mV
min
V/mV
min
V/mV
min
4
4
Input Offset Current
0.001
2
2
Input Resistance
Common Mode
Rejection Ratio
Positive Power Supply
Rejection Ratio
Negative Power Supply
Rejection Ratio
Input Common Mode
Voltage Range
>
1
83
0V
≤
V
CM
≤
12.0V
V
+
= 15V
5V
≤
V
+
≤
15V
70
68
70
68
84
82
0.1
0
V
+
2.3
V
+
2.6
400
250
180
70
200
150
100
35
70
68
70
68
84
83
0.1
0
V
+
2.3
V
+
2.5
400
300
180
120
200
160
100
60
63
61
63
61
74
73
0.1
0
V
+
2.3
V
+
2.5
300
200
90
70
100
80
50
40
83
0V
≤
V
≤
10V
94
V
+
= 5V & 15V
For CMRR
>
50 dB
0.4
V
+
1.9
Large Signal
Voltage Gain
R
L
= 100 k
(Note 5)
Sourcing
Sinking
1000
500
R
L
= 5 k
(Note 5)
Sourcing
Sinking
1000
250
www.national.com
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| LPC660 | Low Power CMOS Quad Operational Amplifier |
| LPC660AIM | Low Power CMOS Quad Operational Amplifier |
| LPC660AIN | Low Power CMOS Quad Operational Amplifier |
| LPC660AMD | Low Power CMOS Quad Operational Amplifier |
| LPC661AIM | Low Power CMOS Operational Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LPC661 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Low Power CMOS Operational Amplifier |
| LPC661AIM | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| LPC661AIMX | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| LPC661AIN | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Low Power CMOS Operational Amplifier |
| LPC661AMN | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Low Power CMOS Operational Amplifier |
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