參數(shù)資料
型號： LPC2102FHN48
廠商： NXP SEMICONDUCTORS
元件分類： 微控制器/微處理器
英文描述： Single-chip 16-bit-32-bit microcontrollers; 8 kB-16 kB-32 kB flash with ISP-IAP, fast ports and 10-bit ADC
中文描述： 32-BIT, FLASH, 70 MHz, RISC MICROCONTROLLER, PQCC48
封裝： 6 X 6 MM, 0.85 MM HEIGHT, PLASTIC, SOT778-3, HVQFN-48
文件頁數(shù)： 24/37頁
文件大?。?/td> 192K
代理商： LPC2102FHN48
LPC2101_02_03_4
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 2 June 2009
24 of 37
NXP Semiconductors
LPC2101/02/03
Single-chip 16-bit/32-bit microcontrollers
I
pu
pull-up current
V
I
= 0 V
V
DD(3V3)
< V
I
< 5 V
[12]
Active mode;
code
[13]
15
50
0
85
0
μ
A
μ
A
0
I
DD(CORE)
core supply current
while(1){}
executed from flash; all peripherals
enabled via PCONP register but not
configured to run; CCLK = 70 MHz
V
DD(1V8)
= 1.8 V; T
amb
= 25
°
C
Power-down mode
;
V
DD(1V8)
= 1.8 V; T
amb
= 25
°
C
V
DD(1V8)
= 1.8 V; T
amb
= 85
°
C
Deep power-down mode
;
RTC off; SRAM off; T
amb
= 25
°
C
V
i(VBAT)
= 3.3 V; V
DD(1V8)
= 1.8 V
Active mode
; CCLK = 70 MHz;
PCLK = 17.5 MHz;
PCLK enabled to RTCK;
RTC clock = 32 kHz (from RTCX
pins); T
amb
= 25
°
C
V
DD(1V8)
= 1.8 V; V
i(VBAT)
= 3.0 V
Power-down mode
;
RTC clock = 32 kHz
(from RTCX pins); T
amb
= 25
°
C
V
DD(1V8)
= 1.8 V; V
i(VBAT)
= 2.5 V
V
DD(1V8)
= 1.8 V; V
i(VBAT)
= 3.0 V
Deep power-down mode
;
RTC off; SRAM off; T
amb
= 25
°
C
V
DD(1V8)
= 1.8 V; V
i(VBAT)
= 3.0 V
-
41
70
mA
-
-
2.5
35
25
105
μ
A
μ
A
-
0.7
-
μ
A
I
BAT
battery supply
current
[14]
-
10
15
μ
A
-
-
7
8
12
12
μ
A
μ
A
-
8
-
μ
A
I
2
C-bus pins
V
IH
HIGH-level input
voltage
LOW-level input
voltage
hysteresis voltage
LOW-level output
voltage
input leakage
current
0.7V
DD(3V3)
-
-
V
V
IL
-
-
0.3V
DD(3V3)
V
V
hys
V
OL
-
0.5V
DD(3V3)
-
-
V
V
I
OLS
= 3 mA
[10]
-
0.4
I
LI
V
I
= V
DD(3V3)
V
I
= 5 V
-
2
10
4
22
μ
A
μ
A
[15]
-
Oscillator pins
V
i(XTAL1)
input voltage on pin
XTAL1
0
-
1.8
V
Table 5.
T
amb
=
40
°
C to +85
°
C for commercial applications, unless otherwise specified.
Symbol
Parameter
Conditions
Static characteristics
…continued
Min
Typ
[1]
Max
Unit
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