參數(shù)資料
型號(hào): LP5526
廠商: National Semiconductor Corporation
元件分類: DRAM
英文描述: 4 Mbit Uniform Sector, Serial Flash Memory
中文描述: 4兆位統(tǒng)一部門,串行閃存
文件頁(yè)數(shù): 21/33頁(yè)
文件大?。?/td> 1150K
代理商: LP5526
Backlight Driver Electrical Characteristics
Symbol
I
MAX
I
LEAKAGE
I
MAIN
I
SUB
Match
MAIN-SUB
Match
MAIN-SUB
V
SAT
Parameter
Conditions
Min
Typical
25.5
0.003
12.8
Max
30
1
14.1
Units
mA
μA
mA
%
%
%
mV
Maximum Sink Current
Leakage Current
MAIN Current tolerance
SUB Current tolerance
V
SUB, MAIN
=20V
I
MAIN
and I
SUB
set to 12.8mA (80H)
11.1
Sink Current Matching Error
Sink Current Matching Error
95% Saturation Voltage
I
SINK
=12.8mA, DISPL=1
I
SINK
=12.8mA, DISPL=0
I
SINK
=25.5mA
0.2
5
400
500
650
Note:
Matching is the maximum difference from the average.
WLED Dimming, SLOPE=0
WLED Dimming, SLOPE=1
20179739
20179740
WLED Output Current vs. Voltage
20179792
L
www.national.com
21
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PDF描述
LP5526TL 4 Mbit Uniform Sector, Serial Flash Memory
LP5526TLX 4 Mbit Uniform Sector, Serial Flash Memory
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LP5550SQ PowerWise Technology Compliant Energy Management Unit
LP5550SQX PowerWise Technology Compliant Energy Management Unit
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