參數(shù)資料
型號: LN189S
廠商: PANASONIC CORP
元件分類: 紅外LED
英文描述: GaAlAs Infrared Light Emitting Diode
中文描述: 0.4 mm, 1 ELEMENT, INFRARED LED, 880 nm
文件頁數(shù): 2/2頁
文件大?。?/td> 44K
代理商: LN189S
2
LN189S
Infrared Light Emitting Diodes
I
F
— V
F
160
140
120
100
80
40
20
60
0
Forward voltage V
F
(V)
Ta = 25C
F
0
0.5
1.0
1.5
2.0
I
FP
— V
F
1
10
–1
Forward voltage V
F
(V)
P
F
10
–2
0
t
= 10
μ
s
f = 100Hz
Ta = 25C
1
3
5
2
4
λ
P
— Ta
1000
900
800
700
600
Ambient temperature Ta (C )
I
F
= 100mA
P
λ
P
– 40
0
40
80
120
I
F
— Ta
120
100
80
60
40
20
Ambient temperature Ta (C )
F
0
20
40
60
80
100
0
– 25
P
O
— I
F
10
3
10
2
10
1
Forward current I
F
(A)
R
P
O
10
10
–2
10
–1
10
–3
10
–2
10
–1
1
(1) t
= 10
μ
s
Duty = 0.1%
(2) t
= 50
μ
s
Duty = 50%
(3) DC
Ta = 25C
P
O
— Ta
10
1
Ambient temperature Ta (C )
I
F
= 80mA
R
P
O
– 40
0
40
80
10
–1
Spectral characteristics
100
80
60
40
20
Wavelength
λ
(nm)
R
820
860
900
940
980
1020
0
780
I
= 50mA
Ta = 25C
Directivity characteristics
0
10
20
30
40
50
60
70
80
90
V
F
— Ta
1.8
1.6
1.4
1.2
0.8
1.0
Ambient temperature Ta (C )
F
F
– 40
0
40
80
120
20
90
100
80
70
60
50
40
30
R
I
F
= 80mA
10mA
1mA
(1)
(2)
(3)
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