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參數(shù)資料
| 型號(hào)： | LN155 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 紅外LED |
| 英文描述： | GaAs Infrared Light Emitting Diode |
| 中文描述： | 3.5 mm, 1 ELEMENT, INFRARED LED, 940 nm |
| 封裝： | LSTFR102-001, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 54K |
| 代理商： | LN155 |
1
1: Anode
2: Cathode
Unit : mm
0.8
±
0.1
3.5
±
0.15
4.5
±
0.15
2.54
0.45
±
0.15
2-0.45
±
0.15
2-1.2
±
0.3
1.6
±
0.15
2.1
±
0.15
N
(
1
±
0
3
±
0
1
1
2
Infrared Light Emitting Diodes
LNA2603F
(LN155)
GaAs Infrared Light Emitting Diode
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
160
100
1.5
3
–25 to +85
– 40 to +100
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
P
O
λ
P
λ
V
F
I
R
C
t
t
r
t
f
θ
Conditions
min
3
typ
6
940
50
1.3
max
Unit
mW
nm
nm
V
μ
A
pF
μ
s
μ
s
deg.
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
Half-power angle
I
F
= 50mA
I
F
= 50mA
I
F
= 50mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
1.6
10
45
1
1
80
I
FP
= 100mA
The angle in which radiant intencity is 50%
For optical control systems
Features
High-power output, high-efficiency : P
O
= 6 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :
λ
P
= 940 nm (typ.)
Long lifetime, high reliability
Thin side-view type package
Note) The part number in the parenthesis shows conventional part number.
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