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參數(shù)資料
| 型號(hào)： | LN151F |
| 廠商： | PANASONIC CORP |
| 元件分類(lèi)： | 紅外LED |
| 英文描述： | GaAs Infrared Light Emitting Diodes |
| 中文描述： | 4.6 mm, 1 ELEMENT, INFRARED LED, 950 nm |
| 封裝： | TO-18, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 40K |
| 代理商： | LN151F |
1
Infrared Light Emitting Diodes
LN151F, LN151L
GaAs Infrared Light Emitting Diodes
LN151L
Glass lens
6
±
0
1: Anode
2: Cathode
Unit : mm
Unit : mm
4.6
±
0.15
Glass window
2.54
±
0.25
10
±
02
10
±
015
5.75 max.
2-0.45
±
0.05
4
±
0
1
4
±
3
1
2
LN151F
1: Anode
2: Cathode
4.6
±
0.15
2.54
±
0.25
10
±
02
10
±
015
5.75 max.
2-0.45
±
0.05
1
4
±
3
1
2
For optical control systems
Features
High-power output, high-efficiency : P
O
= 7.5 mW (typ.)
Fast response and high-speed modulation capability :
t
r
, t
f
= 1
μ
s (typ.)
Infrared light emission close to monochromatic light :
λ
P
= 950 nm (typ.)
Narrow directivity, suitable for effective use of radiant power
(LN151L)
Wide directivity, matched for external optical systems (LN151F)
TO-18 standard type package
Absolute Maximum Ratings
(Ta = 25C)
Parameter
Symbol
P
D
I
F
I
FP*
V
R
T
opr
T
stg
Ratings
160
100
2
3
–25 to +100
–30 to+100
Unit
mW
mA
A
V
C
C
Power dissipation
Forward current (DC)
Pulse forward current
Reverse voltage (DC)
Operating ambient temperature
Storage temperature
*
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics
(Ta = 25C)
Parameter
Symbol
P
O
λ
P
λ
V
F
I
R
C
t
t
r
t
f
Conditions
min
5
typ
7.5
950
50
1.3
max
Unit
mW
nm
nm
V
μ
A
pF
μ
s
μ
s
deg.
deg.
Radiant power
Peak emission wavelength
Spectral half band width
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Rise time
Fall time
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
I
F
= 100mA
V
R
= 3V
V
R
= 0V, f = 1MHz
1.6
10
60
1
1
32
8
I
FP
= 100mA
Half-power angle
LN151F
LN151L
θ
The angle in which radiant intencity is 50%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LN151L | GaAs Infrared Light Emitting Diodes |
| LN152 | GaAs Infrared Light Emitting Diode |
| LN155 | GaAs Infrared Light Emitting Diode |
| LN159 | GaAs Bi-directional Infrared Light Emitting Diode |
| LN15 | Single Jacket Non-Armored |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LN151L | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:GaAs Infrared Light Emitting Diodes |
| LN152 | 功能描述:IR LED 950NM 90 DEG TO-18 SMALL RoHS:是 類(lèi)別:光電元件 >> 紅外發(fā)射極 系列:- 標(biāo)準(zhǔn)包裝:1,200 系列:- 電流 - DC 正向(If):100mA 輻射強(qiáng)度(le)最小值@正向電流:27mW/sr @ 100mA 波長(zhǎng):940nm 正向電壓:1.6V 視角:40° 方向:頂視圖 安裝類(lèi)型:通孔 封裝/外殼:徑向 包裝:帶卷 (TR) |
| LN155 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:GaAs Infrared Light Emitting Diode |
| LN159 | 制造商:PANASONIC 制造商全稱(chēng):Panasonic Semiconductor 功能描述:GaAs Bi-directional Infrared Light Emitting Diode |
| LN15BP | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述: |
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