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參數(shù)資料
| 型號： | LMD18400N |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | Quad High Side Driver |
| 中文描述： | 3.75 A BUF OR INV BASED PRPHL DRVR, PDIP20 |
| 封裝： | N20A |
| 文件頁數(shù)： | 13/18頁 |
| 文件大?。?/td> | 329K |
| 代理商： | LMD18400N |
Applications Information
(Continued)
TL/H/11026–23
FIGURE 13. Switching an Inductive Load
When switched ON, the worst case power dissipation is:
P
D(ON)
e
I
Peak2
c
R
ON
; where I
Peak
e
V
CC
R
ON
a
R
S
The steady-state ON current of the inductor should be kept
less than 1A per power switch.
The additional power dissipation during turn-off, as the in-
ductor is de-energized and the voltage across the inductor
is clamped to
b
5V, can be found by:
P
D(OFF)
e
(V
CC
a
5V)
c
I
Peak
2
for the time interval, t
Clamp
, which is the time required for
the inductor current to fall to zero;
t
Clamp
e
I
Peak
c
L
5V
The size of the inductor will determine the time duration for
this additional power dissipation interval. Even though the
peak current is kept less than 1A, the switch during this
interval will see a voltage across it of V
CC
a
5V with no
power limit protection. If the inductor is too large, the time
interval may be long enough to heat the die temperature to
a
170
§
C thereby shutting OFF all other loads on the pack-
age.
The total average power dissipation during a full ON/OFF
switching cycle of an inductive load will be:
P
D(tot)
e
I
Peak2
R
ON
t
ON
a
I
Peak2
L (V
CC
a
5V)
10
1
t
ON
a
t
OFF
Due to the common cut-off of all loads forced by thermal
shutdown, the thermal time constants of the package be-
come a concern. Figure 14 provides an indication of the
time it takes to heat the die to thermal shutdown with a step
increase in package power dissipation from an initial junc-
tion temperature of
a
25
§
C. This data was measured using
a PC board layout providing a thermal resistance from junc-
tion to ambient of approximately 35
§
C/W. Less heatsinking
will, of course, result in faster thermal shutdown of the pow-
er switches.
TL/H/11026–24
FIGURE 14. Approximate time required for the die to
reach the 170
§
C thermal shutdown point from 25
§
C for
different total package power dissipation levels.
http://www.national.com
13
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