參數(shù)資料
型號: LMD18400
廠商: National Semiconductor Corporation
英文描述: Quad High Side Driver
中文描述: 四高邊驅(qū)動器
文件頁數(shù): 8/18頁
文件大?。?/td> 329K
代理商: LMD18400
Applications Information
(Continued)
PROTECTION CIRCUITRY
The LMD18400 has extensive protection circuitry built in.
With any power device, protection against excessive volt-
age, current and temperature conditions is essential. To
achieve a ‘‘fail-safe’’ system implementation, the loads are
deactivated automatically by the LMD18400 in the event of
any detected overvoltage or over-temperature fault condi-
tions.
Voltage Protection
The V
CC
supply can range from
b
0.5V to
a
60 V
DC
without
any damage to the LMD18400. The CMOS logic circuitry is
biased from an internal 5.1V regulator which protects these
lower voltage transistors from the higher V
CC
potentials. In
order to protect the loads connected to the switch outputs
however, an overvoltage shutdown circuit is employed.
Should the V
CC
potential exceed 35V all of the switches are
turned OFF thereby disconnecting the loads. This 35V
threshold has 750 mV of hysteresis to prevent potential os-
cillations.
Additionally, there is an undervoltage lockout feature built
in. With V
CC
less than 5V it becomes uncertain whether the
logic circuitry can hold the switches in their commanded
state. To avoid this uncertainty, all of the switches are
turned OFF when V
CC
drops below approximately 5V.
Figure 3 illustrates the shutoff of an output during a 0V to
80V V
CC
supply transient.
Over/Under
Voltage Shutdown
TL/H/11026–12
FIGURE 3. Overvoltage/Undervoltage Shutdown
The LMD18400 has been designed to drive all types of
loads. When driving a ground referenced inductive load
such as a relay or solenoid, the voltage across the load will
reverse in polarity as the field in the inductor collapses when
the power switch is turned OFF. This will pull the output pin
of the LMD18400 below ground. This negative transient
voltage is clamped at approximately
b
5V to protect the IC.
This clamping action is not done with diodes but rather the
power DMOS switch turning back on momentarily to con-
duct the inductor current as it de-energizes as shown in
Figure 4.
TL/H/11026–13
FIGURE 4. Turn-OFF Conditions with an Inductive Load
When the output inductance produces a negative voltage,
the gate of the DMOS transistor is clamped at 0V. At
b
3.5V, the source of the power device is less than the gate
by enough to cause the switch to turn ON again. During this
negative transient condition the power limiting circuitry to
protect the switch is disabled due to the gate being held at
0V. The maximum current during this clamping interval,
which is equal to the steady state ON current through the
inductor, should be kept less than 1A. Another concern dur-
ing this interval has to do with the size of an inductive load
and the amount of time required to de-energize it. With larg-
er inductors it may be possible for the additional power dis-
sipation to cause the die temperaure to exceed the thermal
shutdown limit. If this occurs all of the other switches will
turn OFF momentarily (see section on Thermal Manage-
ment).
Power Limiting
The LMD18400 utilizes a true instantaneous power limit cir-
cuit rather than simple current limiting to protect each
switch. This provides a higher transient current capability
while still maintaining a safe power dissipation level. The
power dissipation in each switch (the product of the Drain-to
Source voltage and the output current, V
ds
c
I
OUT
) is con-
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