參數(shù)資料
型號(hào)： LM5112
廠商： National Semiconductor Corporation
英文描述： Tiny 7A MOSFET Gate Driver
中文描述： 小7A條柵極驅(qū)動(dòng)
文件頁(yè)數(shù)： 3/10頁(yè)
文件大小： 236K
代理商： LM5112
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
CC
to V
EE
V
CC
to IN_REF
IN/INB to IN_REF
0.3V to 15V
0.3V to 15V
0.3V to 15V
IN_REF to V
EE
Storage Temperature Range
Maximum Junction Temperature
Operating Junction Temperature
ESD Rating
0.3V to 5V
55C to +150C
+150C
40C+125C
2kV
Electrical Characteristics
put, unless otherwise specified.
T
J
= 40C to +125C, V
CC
= 12V, INB = IN_REF = V
EE
= 0V, No Load on out-
SYMBOL
SUPPLY
V
CC
UVLO
V
CCH
I
CC
CONTROL INPUTS
V
IH
V
IL
HYS
I
IL
I
IH
OUTPUT DRIVER
R
OH
R
OL
I
SOURCE
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
V
CC
operating range
V
CC
Under-voltage lockout (rising)
V
CC
Under-voltage hysteresis
V
CC
supply current
V
CC
– IN_REF and V
CC
- V
EE
V
CC
– IN_REF
3.5
2.4
14
3.5
V
V
3.0
230
1.0
mV
mA
2.0
Logic High
Logic low
Input Hysteresis
Input Current Low
Input Current High
1.75
1.35
400
0.1
0.1
2.3
V
V
0.8
mV
μA
μA
IN = INB = 0V
IN = INB = V
CC
-1
-1
1
1
Output Resistance High
Output Resistance Low
Peak Source Current
I
OUT
= -10mA
I
OUT
= 10mA
OUT = V
CC
/2, 200ns pulsed
current
OUT = V
CC
/2, 200ns pulsed
current
30
1.4
3
50
2.5
A
I
SINK
Peak Sink Current
7
A
SWITCHING CHARACTERISTICS
td1
Propagation Delay Time Low to
High,
IN/ INB rising ( IN to OUT)
td2
Propagation Delay Time High to
Low,
IN / INB falling (IN to OUT)
tr
Rise time
tf
Fall time
LATCHUP PROTECTION
AEC –Q100, METHOD 004
C
LOAD
= 2 nF, see
Figure 3
25
40
ns
C
LOAD
= 2 nF, see
Figure 3
25
40
ns
C
LOAD
= 2 nF , see
Figure 3
C
LOAD
= 2 nF , see
Figure 3
14
12
ns
ns
T
J
= 150C
500
mA
Note 1:
Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device
is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics.
L
www.national.com
3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LM5112MY 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
LM5112MY/NOPB 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
LM5112MY-NOPB 制造商:TI 制造商全稱:Texas Instruments 功能描述:Compound CMOS and Bipolar Outputs Reduce Output Current Variation
LM5112MYX 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
LM5112MYX/NOPB 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
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