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參數(shù)資料
| 型號： | LM5111-2M |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | Dual 5A Compound Gate Driver |
| 中文描述： | 5 A BUF OR INV BASED PRPHL DRVR, PDSO8 |
| 封裝： | MS-012AA, SOIC-8 |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 205K |
| 代理商： | LM5111-2M |
Thermal Performance
(Continued)
We know that the junction temperature is given by
T
J
= P
D
x
θ
JA
+ T
A
Or the rise in temperature is given by
T
RISE
= T
J
T
A
= P
D
x
θ
JA
For SOIC-8 package
θ
is estimated as 170C/W for the
conditions of natural convection.
Therefore T
RISE
is equal to
T
RISE
= 0.236 x 170 = 40.1C
CONTINUOUS CURRENT RATING OF LM5111
The LM5111 can deliver pulsed source/sink currents of 3A
and 5A to capacitive loads. In applications requiring continu-
ous load current (resistive or inductive loads), package
power dissipation, limits the LM5111 current capability far
below the 5A sink/3A source capability. Rated continuous
current can be estimated both when sourcing current to or
sinking current from the load. For example when sinking, the
maximum sink current can be calculated as:
where R
(on) is the on resistance of lower MOSFET in the
output stage of LM5111.
Consider T
(max) of 125C and
θ
of 170C/W for an SO-8
package under the condition of natural convection and no air
flow. If the ambient temperature (T
) is 60C, and the R
D-
S
(on) of the LM5111 output at T
(max) is 2.5
, this equation
yields I
(max) of 391mA which is much smaller than 5A
peak pulsed currents.
Similarly, the maximum continuous source current can be
calculated as
where V
is the voltage drop across hybrid output stage
which varies over temperature and can be assumed to be
about 1.1V at T
(max) of 125C. Assuming the same param-
eters as above, this equation yields I
SOURCE
(max) of 347mA.
L
www.national.com
9
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LM5111-2MX | Dual 5A Compound Gate Driver |
| LM5111-3M | Dual 5A Compound Gate Driver |
| LM5111-3MX | Dual 5A Compound Gate Driver |
| LM5112 | Tiny 7A MOSFET Gate Driver |
| LM5112-SD | Tiny 7A MOSFET Gate Driver |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM5111-2M/NOPB | 功能描述:功率驅(qū)動器IC Dual 5A Compound Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5111-2M/NOPB | 制造商:Texas Instruments 功能描述:MOSFET Driver |
| LM5111-2MX | 功能描述:IC MOSFET DRIVER DUAL 5A 8-SOIC RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 外部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063 |
| LM5111-2MX/NOPB | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5111-2MY | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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