參數(shù)資料
型號(hào)： LM5109MAX
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類： 功率晶體管
英文描述： 100V / 1A Peak Half Bridge Gate Driver
中文描述： 1 A HALF BRDG BASED MOSFET DRIVER, PDSO8
封裝： MS-012AA, SOIC-8
文件頁(yè)數(shù)： 3/9頁(yè)
文件大?。?/td> 657K
代理商： LM5109MAX
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD
to V
SS
HB to HS
LI or HI to V
SS
LO to V
SS
HO to V
SS
HS to V
SS
(Note 6)
HB to V
SS
Junction Temperature
-0.3V to 18V
0.3V to 18V
0.3V to V
DD
+0.3V
0.3V to V
DD
+0.3V
V
HS
0.3V to V
HB
+0.3V
5V to 100V
118V
-40C to +150C
Storage Temperature Range
ESD Rating HBM (Note 2)
55C to +150C
2 kV
Recommended Operating
Conditions
V
DD
HS (Note 6)
HB
HS Slew Rate
Junction Temperature
8V to 14V
1V to 100V
V
HS
+8V to V
HS
+14V
<
50 V/ns
40C to +125C
Electrical Characteristics
Specifications in standard typeface are for T
J
= +25C, and those in
boldface type
apply over the full
operating junction tem-
perature range
. Unless otherwise specified, V
DD
= V
HB
= 12V, V
SS
= V
HS
= 0V, No Load on LO or HO .
Symbol
Parameter
Conditions
SUPPLY CURRENTS
I
DD
V
DD
Quiescent Current
LI = HI = 0V
I
DDO
V
DD
Operating Current
f = 500 kHz
I
HB
Total HB Quiescent Current
LI = HI = 0V
I
HBO
Total HB Operating Current
f = 500 kHz
I
HBS
HB to V
SS
Current, Quiescent
V
HS
= V
HB
= 100V
I
HBSO
HB to V
SS
Current, Operating
f = 500 kHz
INPUT PINS LI and HI
V
IL
Low Level Input Voltage Threshold
V
IH
High Level Input Voltage Threshold
R
I
Input Pulldown Resistance
UNDER VOLTAGE PROTECTION
V
DDR
V
DD
Rising Threshold
V
DDR
= V
DD
- V
SS
V
DDH
V
DD
Threshold Hysteresis
V
HBR
HB Rising Threshold
V
HBR
= V
HB
- V
HS
V
HBH
HB Threshold Hysteresis
LO GATE DRIVER
V
OLL
Low-Level Output Voltage
I
LO
= 100 mA
V
OHL
= V
LO
– V
SS
V
OHL
High-Level Output Voltage
I
LO
= 100 mA,
V
OHL
= V
DD
– V
LO
I
OHL
Peak Pullup Current
V
LO
= 0V
I
OLL
Peak Pulldown Current
V
LO
= 12V
HO GATE DRIVER
V
OLH
Low-Level Output Voltage
I
HO
= 100 mA
V
OLH
= V
HO
– V
HS
V
OHH
High-Level Output Voltage
I
HO
= 100 mA
V
OHH
= V
HB
– V
HO
I
OHH
Peak Pullup Current
V
HO
= 0V
I
OLH
Peak Pulldown Current
V
HO
= 12V
THERMAL RESISTANCE
θ
JA
Junction to Ambient
SOIC-8
LLP-8 (Note 3)
Min
Typ
Max
Units
0.3
2.1
0.06
1.6
0.1
0.5
0.6
3.4
0.2
3.0
10
mA
mA
mA
mA
μA
mA
0.8
1.8
1.8
180
V
V
k
2.2
500
100
6.0
6.9
0.5
6.6
0.4
7.4
V
V
V
V
5.7
7.1
0.28
0.45
V
0.45
0.75
V
1.0
1.0
A
A
0.28
0.45
V
0.45
0.75
V
1.0
1.0
A
A
160
40
C/W
L
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LM5109MAX/J7001236 制造商:Rochester Electronics LLC 功能描述: 制造商:Texas Instruments 功能描述:
LM5109MAX/NOPB 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
LM5109SD 功能描述:IC DVR HALF-BRIDGE 100V 1A 8LLP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 外部開(kāi)關(guān) 系列:- 標(biāo)準(zhǔn)包裝:5 系列:- 配置:低端 輸入類型:非反相 延遲時(shí)間:600ns 電流 - 峰:12A 配置數(shù):1 輸出數(shù):1 高端電壓 - 最大（自引導(dǎo)啟動(dòng)）:- 電源電壓:14.2 V ~ 15.8 V 工作溫度:-20°C ~ 60°C 安裝類型:通孔 封裝/外殼:21-SIP 模塊 供應(yīng)商設(shè)備封裝:模塊 包裝:散裝 配用:BG2A-NF-ND - KIT DEV BOARD FOR IGBT 其它名稱:835-1063
LM5109SD/NOPB 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
LM5109SDX 制造商:NSC 制造商全稱:National Semiconductor 功能描述:100V / 1A Peak Half Bridge Gate Driver
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