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參數(shù)資料
| 型號： | LM5102MM |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | High Voltage Half-Bridge Gate Driver with Programmable Delay |
| 中文描述： | 1.8 A HALF BRIDGE BASED PRPHL DRVR, PDSO10 |
| 封裝： | MSOP-10 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 368K |
| 代理商： | LM5102MM |
Operational Notes
(Continued)
Diode Power Dissipation V
IN
= 80V
20088906
Diode Power Dissipation V
IN
= 40V
20088907
The total IC power dissipation can be estimated from the
above plots by summing the gate drive losses with the
bootstrap diode losses for the intended application. Because
the diode losses can be significant, an external diode placed
in parallel with the internal bootstrap diode (refer to
Figure 4
)
and can be helpful in removing power from the IC. For this to
be effective, the external diode must be placed close to the
IC to minimize series inductance and have a significantly
lower forward voltage drop than the internal diode.
L
www.national.com
10
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| LM5102MM/NOPB | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5102MMNOPB | 制造商:National Semiconductor 功能描述:MOSFET DRVR 1.8A 2-OUT Hi/Lo Side Half Brdg Non-Inv 10-Pin MSOP T/R 制造商:National Semiconductor 功能描述:MOSFET DRVR 1.8A 2-OUT Hi/Lo Side Half Brdg Non-Inv 10-Pin VSSOP T/R |
| LM5102MMX | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5102MMX/NOPB | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5102SD | 功能描述:功率驅(qū)動器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時間: 下降時間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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