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參數(shù)資料
| 型號(hào)： | LM5100 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | High Voltage High Side and Low Side Gate Driver |
| 中文描述： | 高電壓高側(cè)和低側(cè)柵極驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 350K |
| 代理商： | LM5100 |
Timing Diagram
Layout Considerations
The optimum performance of high and low side gate drivers
cannot be achieved without taking due considerations during
circuit board layout. Following points are emphasized.
1.
A low ESR / ESL capacitor must be connected close to
the IC, and between V
DD
and V
SS
pins and between HB
and HS pins to support high peak currents being drawn
from VDD during turn-on of the external MOSFET.
2.
To prevent large voltage transients at the drain of the top
MOSFET, a low ESR electrolytic capacitor must be con-
nected between MOSFET drain and ground (V
SS
).
3.
In order to avoid large negative transients on the switch
node (HS) pin, the parasitic inductances in the source of
top MOSFET and in the drain of the bottom MOSFET
(synchronous rectifier) must be minimized.
4.
Grounging Considerations:
a) The first priority in designing grounding connections
is to confine the high peak currents from charging and
discharging the MOSFET gate in a minimal physical
area. This will decrease the loop inductance and mini-
mize noise issues on the gate terminal of the MOSFET.
The MOSFETs should be placed as close as possible to
the gate driver.
b) The second high current path includes the boot-
strap capacitor, the bootstrap diode, the local ground
referenced bypass capacitor and low side MOSFET
body diode. The bootstrap capacitor is recharged on the
cycle-by-cycle basis through the bootstrap diode from
the ground referenced V
bypass capacitor. The re-
charging occurs in a short time interval and involves high
peak current. Minimizing this loop length and area on the
circuit board is important to ensure reliable operation.
Power Dissipation Considerations
The total IC power dissipation is the sum of the gate driver
losses and the bootstrap diode losses. The gate driver
losses are related to the switching frequency (f), output load
capacitance on LO and HO (C
L
), and supply voltage (V
DD
)
and can be roughly calculated as:
P
DGATES
= 2
f
C
L
V
DD2
There are some additional losses in the gate drivers due to
the internal CMOS stages used to buffer the LO and HO
outputs. The following plot shows the measured gate driver
power dissipation versus frequency and load capacitance.At
higher frequencies and load capacitance values, the power
dissipation is dominated by the power losses driving the
output loads and agrees well with the above equation. This
plot can be used to approximate the power losses due to the
gate drivers.
Gate Driver Power Dissipation (LO + HO)
V
CC
= 12V, Neglecting Diode Losses
20088805
20088804
FIGURE 3.
L
www.national.com
9
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM5100A | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers |
| LM5100AM | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5100AM/NOPB | 功能描述:功率驅(qū)動(dòng)器IC 100V 3Amp 1/2-Bridge Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5100AM_NOPB | 制造商:TI 制造商全稱:Texas Instruments 功能描述:3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers |
| LM5100AMR/NOPB | 功能描述:功率驅(qū)動(dòng)器IC 100V 3Amp 1/2-Bridge Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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