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參數(shù)資料
| 型號(hào)： | LM5100 |
| 廠商： | National Semiconductor Corporation |
| 英文描述： | High Voltage High Side and Low Side Gate Driver |
| 中文描述： | 高電壓高側(cè)和低側(cè)柵極驅(qū)動(dòng)器 |
| 文件頁(yè)數(shù)： | 10/12頁(yè) |
| 文件大?。?/td> | 350K |
| 代理商： | LM5100 |
Power Dissipation Considerations
(Continued)
The bootstrap diode power loss is the sum of the forward
bias power loss that occurs while charging the bootstrap
capacitor and the reverse bias power loss that occurs during
reverse recovery. Since each of these events happens once
per cycle, the diode power loss is proportional to frequency.
Larger capacitive loads require more current to recharge the
bootstrap capacitor resulting in more losses. Higher input
voltages (V
) to the half bridge result in higher reverse
recovery losses. The following plot was generated based on
calculations and lab measurements of the diode recovery
time and current under several operating conditions. This
can be useful for approximating the diode power dissipation.
Diode Power Dissipation V
IN
= 80V
20088806
Diode Power Dissipation V
IN
= 40V
20088807
The total IC power dissipation can be estimated from the
previous plots by summing the gate drive losses with the
bootstrap diode losses for the intended application. Because
the diode losses can be significant, an external diode placed
in parallel (refer to
Figure 4
) with the internal bootstrap diode
can be helpful in removing power from the IC. For this to be
effective, the external diode must be placed close to the IC to
minimize series inductance and have a significantly lower
forward voltage drop than the internal diode.
20088808
FIGURE 4. LM5101 Driving MOSFETs Connected in Half-Bridge Configuration
L
www.national.com
10
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| LM5102MMX | High Voltage Half-Bridge Gate Driver with Programmable Delay |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LM5100A | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers |
| LM5100AM | 功能描述:功率驅(qū)動(dòng)器IC RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5100AM/NOPB | 功能描述:功率驅(qū)動(dòng)器IC 100V 3Amp 1/2-Bridge Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| LM5100AM_NOPB | 制造商:TI 制造商全稱:Texas Instruments 功能描述:3A, 2A and 1A High Voltage High-Side and Low-Side Gate Drivers |
| LM5100AMR/NOPB | 功能描述:功率驅(qū)動(dòng)器IC 100V 3Amp 1/2-Bridge Driver RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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