參數(shù)資料
型號： LM4431M3-2.5
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類： 基準電壓源/電流源
英文描述： Micropower Shunt Voltage Reference
中文描述： 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, PDSO3
封裝： PLASTIC, SOT-23, 3 PIN
文件頁數(shù)： 2/8頁
文件大小： 130K
代理商： LM4431M3-2.5
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Reverse Current
Forward Current
Power Dissipation (T
A
= 25C) (Note 2)
M3 Package
Storage Temperature
Lead Temperature
M3 Package
Vapor phase (60 seconds)
Infrared (15 seconds)
20 mA
10 mA
306 mW
65C to +150C
+215C
+220C
ESD Susceptibility
Human Body Model (Note 3)
Machine Model (Note 3)
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
2 kV
200V
Operating Ratings
(Notes 1, 2)
Temperature Range
(T
min
≤
T
A
≤
T
max
)
Reverse Current
LM4431-2.5
0C
≤
T
A
≤
+70C
100 μA to 15 mA
LM4431-2.5
Electrical Characteristics
Boldface limits apply for T
A
= T
J
= T
MIN
to T
MAX
;
all other limits T
A
= T
J
= 25C.
Symbol
Parameter
Conditions
Typical
(Note 4)
LM4431M3
Limits
(Note 5)
Units
(Limit)
V
R
Reverse Breakdown Voltage
Reverse Breakdown
VoltageTolerance
Minimum Operating Current
I
R
= 100 μA
I
R
= 100 μA
2.500
V
±
50
mV (max)
I
RMIN
45
μA
100
μA (max)
ppm/C
ppm/C
ppm/C
mV
mV (max)
mV (max)
mV
mV (max)
mV (max)
V
R
/
T
Average Reverse Breakdown
Voltage Temperature
Coefficient
Reverse Breakdown Voltage
Change with Operating
Current Change
I
R
= 10 mA
I
R
= 1 mA
I
R
= 100 μA
I
RMIN
≤
I
R
≤
1 mA
±
30
±
30
±
30
0.4
V
R
/
I
R
1.0
1.2
1 mA
≤
I
R
≤
15 mA
2.5
8.0
25
Z
R
Reverse Dynamic Impedance
I
R
= 1 mA, f = 120 Hz
I
AC
= 0.1 I
R
I
R
= 100 μA
10 Hz
≤
f
≤
10 kHz
t = 1000 hrs
T = 25C
±
0.1C
I
R
= 100 μA
1.0
e
N
Wideband Noise
35
μV
rms
V
R
Reverse Breakdown Voltage
Long Term Stability
120
ppm
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed speci-
fications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions.
Note 2:
The maximum power dissipation must be derated at elevated temperatures and is dictated by T
Jmax
(maximum junction temperature),
θ
JA
(junction to am-
bient thermal resistance), and T
(ambient temperature). The maximum allowable power dissipation at any temperature is PD
= (T
Jmax
T
)/
θ
or the number
given in the Absolute Maximum Ratings, whichever is lower. For the LM4431, T
Jmax
= 125C, and the typical thermal resistance (
θ
JA
), when board mounted, is
326C/W for the SOT-23 package.
Note 3:
The human body model is a 100 pF capacitor discharged through a 1.5 k
resistor into each pin. The machine model is a 200 pF capacitor discharged di-
rectly into each pin.
Note 4:
Typicals are at T
J
= 25C and represent most likely parametric norm.
Note 5:
Limits are 100% production tested at 25C. Limits over temperature are guaranteed through correlation using Statistical Quality Control (SQC) methods. The
limits are used to calculate National’s AOQL.
www.national.com
2
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