參數(shù)資料
型號(hào)： LM4431
廠商： National Semiconductor Corporation
英文描述： Micropower Shunt Voltage Reference
中文描述： 微功耗并聯(lián)電壓基準(zhǔn)
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 130K
代理商： LM4431
LM4431
Micropower Shunt Voltage Reference
General Description
Ideal for space critical applications, the LM4431 voltage ref-
erence is available in the sub-miniature (3 mm x 1.3 mm)
SOT-23 surface-mount package. The LM4431’s advanced
design eliminates the need for an external stabilizing capaci-
tor while ensuring stability with any capacitive load, thus
making the LM4431 easy to use. The operating current
range is 100 μA to 15 mA.
The LM4431 utilizes fuse and zener-zap reverse breakdown
voltage trim during wafer sort to ensure that the parts have
an accuracy of better than
±
2.0% at 25C. Bandgap refer-
ence temperature drift curvature correction and low dynamic
impedance ensure stable reverse breakdown voltage accu-
racy over a wide range of operating temperatures and cur-
rents.
Features
n
Small package: SOT-23
n
No output capacitor required
n
Tolerates capacitive loads
n
Fixed reverse breakdown voltage of 2.50V
Key Specifications
n
Output voltage tolerance 25C:
±
2.0% (max)
n
Low output noise (10 Hz to 10 kHz): 35 μV
rms
(typ)
n
Wide operating current range: 100 μA to 15 mA
n
Commercial temperature range: 0C to +70C
n
Low temperature coefficient: 30 ppm/C (typ)
Applications
n
Portable, Battery-Powered Equipment
n
Data Acquisition Systems
n
Instrumentation
n
Process Control
n
Energy Management
n
Product Testing
n
Power Supplies
Connection Diagram
SOT-23 Package Marking Information
Only three fields of marking are possible on the SOT-23’s small surface. The following table gives the meaning of the three
fields.
Part Marking
S2E
Field Definition
First Field:
S = Reference
Second Field:
2 = 2.500V Voltage Option
Third Field:
E = Initial Reverse Breakdown Voltage Tolerance of
±
2.0%
SOT-23
DS011374-1
* This pin must be left floating or connected to pin 2.
Top View
Order Number LM4431M3-2.5
See NS Package Number M03B
(JEDEC Registration TO-236AB)
July 1998
L
1998 National Semiconductor Corporation
DS011374
www.national.com
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