參數(shù)資料
型號(hào)： LM359
廠商： National Semiconductor Corporation
英文描述： Dual, High Speed, Programmable, Current Mode Norton Amplifiers
中文描述： 雙路，高速，可編程，電流模式諾頓放大器
文件頁(yè)數(shù)： 2/24頁(yè)
文件大小： 742K
代理商： LM359
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
22 V
DC
or
±
11 V
DC
Power Dissipation (Note 2)
J Package
N Package
Maximum T
J
J Package
N Package
Thermal Resistance
J Package
θ
jA
147C/W still air
110C/W with 400 linear feet/min air flow
N Package
θ
jA
100C/W still air
75C/W with 400 linear feet/min air flow
1W
750 mW
+150C
+125C
Input Currents, I
IN
(+) or I
IN
()
Set Currents, I
SET(IN)
or I
SET(OUT)
Operating Temperature Range
LM359
Storage Temperature Range
Lead Temperature
(Soldering, 10 sec.)
Soldering Information
Dual-In-Line Package
Soldering (10 sec.)
Small Outline Package
Vapor Phase (60 sec.)
Infrared (15 sec.)
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
ESD rating to be determined.
10 mA
DC
2 mA
DC
0C to +70C
65C to +150C
260C
260C
215C
220C
Electrical Characteristics
I
SET(IN)
= I
SET(OUT)
= 0.5 mA, V
supply
= 12V, T
A
= 25C unless otherwise noted
Parameter
Conditions
LM359
Typ
72
68
30
Units
Min
62
Max
Open Loop Voltage
Gain
Bandwidth
Unity Gain
Gain Bandwidth Product
Gain of 10 to 100
Slew Rate
Unity Gain
Gain of 10 to 100
Amplifier to Amplifier
Coupling
Mirror Gain
(Note 3)
V
supply
= 12V, R
L
= 1k, f = 100 Hz
T
A
= 125C
R
IN
= 1 k
, C
comp
= 10 pF
dB
dB
MHz
15
R
IN
= 50
to 200
200
400
MHz
R
IN
= 1 k
, C
comp
= 10 pF
R
IN
<
200
f = 100 Hz to 100 kHz, R
L
= 1k
30
60
80
V/μs
V/μs
dB
at 2 mA I
IN
(+), I
SET
= 5 μA, T
A
= 25C
at 0.2 mA I
IN
(+), I
SET
= 5 μA
Over Temp.
at 20 μA I
IN
(+), I
SET
= 5 μA
Over Temp.
at 20 μA to 0.2 mA I
IN
(+)
Over Temp, I
SET
= 5 μA
Inverting Input, T
A
= 25C
Over Temp.
Inverting Input
I
OUT
= 15 mA rms, f = 1 MHz
R
L
= 600
I
IN
() and I
IN
(+) Grounded
I
IN
() = 100 μA, I
IN
(+) = 0
0.9
0.9
1.0
1.0
1.1
1.1
μA/μA
μA/μA
0.9
1.0
1.1
μA/μA
Mirror Gain
(Note 3)
Input Bias Current
3
5
%
8
15
30
μA
μA
k
Input Resistance (
β
re)
Output Resistance
Output Voltage Swing
V
OUT
High
V
OUT
Low
2.5
3.5
9.5
10.3
2
V
50
mV
www.national.com
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