參數(shù)資料
型號: LM3205SDX-2
廠商: NATIONAL SEMICONDUCTOR CORP
元件分類: 穩(wěn)壓器
英文描述: 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers
中文描述: 1.2 A SWITCHING REGULATOR, 2300 kHz SWITCHING FREQ-MAX, PDSO10
封裝: LLP-10
文件頁數(shù): 5/18頁
文件大?。?/td> 1285K
代理商: LM3205SDX-2
System Characteristics
values in the typical application circuit are used.
These parameters are not guaranteed by production testing.
Min and
Max limits apply over the full operating ambient temperature range (30C
T
A
85C) and over the V
IN
range = 2.7V to
5.5V, T
A
= 25C, PV
IN
= V
DD
= EN = 3.6V, L = 3.3μH, DCR of L
100m
, C
IN
= 10μF, 0603, 6.3V (4.7μF||4.7μF, 0603, 6.3V
can be used), C
OUT
= 4.7μF, 0603, 6.3V for LM3205TL/LM3205SD unless otherwise noted.
The following spec table entries are guaranteed by design providing the component
Symbol
T
RESPONSE
Parameter
Conditions
Min
Typ
Max
Units
Time for V
OUT
to rise from 0.8V
to 3.6V
Time for V
OUT
to fall from 3.6V
to 0.8V
V
CON
input capacitance
V
IN
= 4.2V, C
OUT
= 4.7μF, L = 3.3μH,
R
LOAD
= 5.5
V
IN
= 4.2V, C
OUT
= 4.7μF, L = 3.3μH,
R
LOAD
= 10
V
CON
= 1V,
Test frequency = 100 kHz
V
IN
= 3.9V
Monotonic in nature
20
30
μs
20
30
μs
C
CON
20
pF
Linearity
Linearity in control
range 0.32V to 1.44V
Control pin input current
Turn on time
(time for output to reach 3.6V
from Enable low to high
transition)
Efficiency
(L = 3.3μH, DCR
100m
)
V
OUT
_ripple Ripple voltage, PWM mode
-3
+3
%
I
CON
T
ON
-10
10
μA
EN = Low to High, V
IN
= 4.2V, V
O
=
3.6V, C
OUT
= 4.7μF, I
OUT
1mA
70
100
μs
η
V
IN
= 3.6V, V
OUT
= 0.8V, I
OUT
= 90mA
V
IN
= 4.2V, V
OUT
= 3.4V, I
OUT
= 400mA
V
IN
= 3V to 4.5V, V
OUT
= 0.8V, I
OUT
=
10mA to 400mA (Note 12)
V
IN
= 600mV perturbance,
T
RISE
= T
FALL
= 10μs, V
OUT
= 0.8V, I
OUT
= 100mA
V
IN
= 3.1/3.6/4.5V, V
OUT
= 0.8V,
transients up to 100mA, T
RISE
= T
FALL
=
10μs
sine wave perturbation
frequency = 10kHz, amplitude =
100mVp-p
83
96
%
%
10
mVp-p
Line_tr
Line transient response
50
mVpk
Load_tr
Load transient response
50
mVpk
PSRR
V
IN
= 3.6V, V
OUT
= 0.8V, I
OUT
= 100mA
40
dB
Note 1:
Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of
the device is guaranteed. Operating Ratings do not imply guaranteed performance limits. For guaranteed performance limits and associated test conditions, see the
Electrical Characteristics tables.
Note 2:
All voltages are with respect to the potential at the GND pins. The LM3205 is designed for mobile phone applications where turn-on after power-up is
controlled by the system controller and where requirements for a small package size overrule increased die size for internal Under Voltage Lock-Out (UVLO) circuitry.
Thus, it should be kept in shutdown by holding the EN pin low until the input voltage exceeds 2.7V.
Note 3:
Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at T
J
= 150C (typ.) and disengages at T
J
=
130C (typ.).
Note 4:
The Human body model is a 100pF capacitor discharged through a 1.5k
resistor into each pin. (MIL-STD-883 3015.7) The machine model is a 200pF
capacitor discharged directly into each pin.
Note 5:
In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be
de-rated. Maximum ambient temperature (T
A-MAX
) is dependent on the maximum operating junction temperature (T
= 125C), the maximum power
dissipation of the device in the application (P
D-MAX
), and the junction-to ambient thermal resistance of the part/package in the application (
θ
JA
), as given by the
following equation: T
A-MAX
= T
J-MAX-OP
– (
θ
JA
D-MAX
).
Note 6: microSMD:
Junction-to-ambient thermal resistance (
θ
JA
) is taken from thermal measurements, performed under the conditions and guidelines set forth in
the JEDEC standard JESD51-7. A 4 layer, 4" x 4", 2/1/1/2 oz. Cu board as per JEDEC standards is used for the measurements.
LLP:
The value of (
θ
JA
) in LLP-10 could fall in a range of 50C/W to 150C/W (if not wider), depending on PWB material, layout, and environmental conditions. In
applications where high maximum power dissipation exits (high V
IN
, high I
OUT
), special care must be paid to thermal dissipation areas. For more information on
these topics for LLP, refer to
Application Note 1187: Leadless Leadframe Package (LLP)
and the
Power Efficiency and Power Dissipation
section of this
datasheet
Note 7:
Min and Max limits are guaranteed by design, test, or statistical analysis. Typical numbers are not guaranteed, but do represent the most likely norm. Due
to the pulsed nature of the testing T
A
= T
J
for the electrical characteristics table.
Note 8:
The parameters in the electrical characteristics table are tested under open loop conditions at PV
IN
= V
DD
= 3.6V. For performance over the input voltage
range and closed loop results refer to the datasheet curves.
Note 9:
Shutdown current includes leakage current of PFET.
Note 10:
I
Q
specified here is when the part is operating at 100% duty cycle.
Note 11:
Current limit is built-in, fixed, and not adjustable. Refer to datasheet curves for closed loop data and its variation with regards to supply voltage and
temperature. Electrical Characteristic table reflects open loop data (FB = 0V and current drawn from SW pin ramped up until cycle by cycle limit is activated). Closed
loop current limit is the peak inductor current measured in the application circuit by increasing output current until output voltage drops by 10%.
L
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