參數(shù)資料
型號： LM3205SDX-2
廠商： NATIONAL SEMICONDUCTOR CORP
元件分類： 穩(wěn)壓器
英文描述： 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers
中文描述： 1.2 A SWITCHING REGULATOR, 2300 kHz SWITCHING FREQ-MAX, PDSO10
封裝： LLP-10
文件頁數(shù)： 4/18頁
文件大?。?/td> 1285K
代理商： LM3205SDX-2
Absolute Maximum Ratings
(Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
DD
, PV
IN
to SGND
PGND to SGND
EN, FB, V
CON
0.2V to +6.0V
0.2V to +0.2V
(SGND 0.2V)
to (V
DD
+0.2V)
w/6.0V max
(PGND 0.2V)
to (PV
IN
+0.2V)
w/6.0V max
0.2V to +0.2V
SW
PV
IN
to V
DD
Continuous Power Dissipation
(Note 3)
Junction Temperature (T
J-MAX
)
Storage Temperature Range
Maximum Lead Temperature
(Soldering, 10 sec)
ESD Rating (Notes 4, 13)
Human Body Model:
Machine Model:
Internally Limited
+150C
65C to +150C
+260C
2 kV
200V
Operating Ratings
(Notes 1, 2)
Input Voltage Range
Recommended Load Current
Junction Temperature (T
J
) Range
Ambient Temperature (T
A
) Range
(Note 5)
2.7V to 5.5V
0mA to 650mA
30C to +125C
30C to +85C
Thermal Properties
Junction-to-Ambient Thermal microSMD
Resistance (
θ
JA
), microSMD TLA08 Package
(Note 6)
Junction-to-Ambient Thermal LLP
Resistance (
θ
JA
), LLP SDA10A Package
(Note 6)
100C/W
55C/W
Electrical Characteristics
(Notes 2, 7, 8)
face
type apply over the full operating ambient temperature range (30C
≤
T
A
= T
J
≤
+85C). Unless otherwise noted, all
specifications apply to LM3205TL/LM3205SD with: PV
IN
= V
DD
= EN = 3.6V.
Limits in standard typeface are for T
A
= T
J
= 25C. Limits in
bold-
Symbol
V
FB, MIN
Parameter
Conditions
Min
Typ
Max
Units
Feedback Voltage at
minimum setting
Feedback Voltage at
maximum setting
Shutdown supply current
V
CON
= 0.32V(Note 8)
0.75
0.8
0.85
V
V
FB, MAX
V
CON
= 1.44V, V
IN
= 4.2V(Note 8)
3.537
3.6
3.683
V
I
SHDN
EN = SW = V
CON
= 0V,
(Note 9)
V
CON
= 2V, FB = 0V,
No Switching (Note 10)
I
SW
= 200mA
0.01
2
μA
I
Q
DC bias current into V
DD
1
1.4
mA
R
DSON(P)
micro
SMD
R
DSON(N)
micro
Pin-pin resistance for
PFET
Pin-pin resistance for
NFET
Pin-pin resistance for
PFET
Pin-pin resistance for
NFET
Switch peak current limit
Internal oscillator
frequency
Logic high input threshold
Logic low input threshold
Pin pull down current
V
CON
input resistance
V
CON
to V
OUT
Gain
140
200
230
415
485
230
260
445
515
1200
m
SMD
R
DSON(P)
LLP
I
SW
= -200mA
300
m
I
SW
= 200mA
170
m
R
DSON(N)
LLP
I
SW
= -200mA
330
m
I
LIM,PFET
F
OSC
(Note 11)
935
1100
mA
1.7
2
2.3
MHz
V
IH,EN
V
IL,EN
I
PIN,EN
Z
CON
Gain
1.2
V
V
μA
k
V/V
0.5
10
5
100
0.32V
≤
V
CON
≤
1.44V
2.5
L
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4
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