參數(shù)資料
型號： LHF16J06
廠商： Sharp Corporation
英文描述： Flash Memory 16M (1M 】 16 / 2M 】 8)
中文描述： 閃存16M內(nèi)存（100萬】16 / 2米】8）
文件頁數(shù)： 6/47頁
文件大小： 245K
代理商： LHF16J06
LHF16J06
4
Rev. 1.26
The access time is 90ns (t
AVQV
) over the operating
temperature range (0°C to +70°C) and V
CC
supply voltage
range of 2.7V-3.6V.
The Automatic Power Savings (APS) feature substantially
reduces active current when the device is in static mode
(addresses not switching). In APS mode, the typical I
CCR
current is 2μA (CMOS) at 3.0V V
CC
.
When CE# and RP# pins are at V
CC
, the I
CC
CMOS
standby mode is enabled. When the RP# pin is at GND,
reset mode is enabled which minimizes power
consumption and provides write protection. A reset time
(t
PHQV
) is required from RP# switching high until outputs
are valid. Likewise, the device has a wake time (t
PHEL
)
from RP#-high until writes to the CUI are recognized.
With RP# at GND, the WSM is reset and the status
register is cleared.
Please do not execute reprogramming "0" for the bit which
has already been programed "0". Overwrite operation may
generate unerasable bit. In case of reprogramming "0" to
the data which has been programed "1".
·Program "0" for the bit in which you want to change
data from "1" to "0".
·Program "1" for the bit which has already been
programmed "0".
For example, changing data from "10111101" to
"10111100" requires "11111110" programming.
1.3 Product Description
1.3.1 Package Pinout
LH28F160BJE-BTL90 Boot Block Flash memory is
available in 48-lead TSOP package (see Figure 2).
1.3.2 Block Organization
This
architecture providing system memory integration. Each
erase block can be erased independently of the others up to
100,000 times. For the address locations of the blocks, see
the memory map in Figure 3.
product
features
an
asymmetrically-blocked
Boot Blocks: The boot block is intended to replace a
dedicated
boot
PROM
microcontroller-based system. This boot block 4K words
(4,096words) features hardware controllable write-
protection to protect the crucial microprocessor boot code
from accidental modification. The protection of the boot
block is controlled using a combination of the V
CCW
, RP#,
WP# pins and block lock-bit.
in
a
microprocessor
or
Parameter Blocks: The boot block architecture includes
parameter blocks to facilitate storage of frequently update
small parameters that would normally require an
EEPROM. By using software techniques, the word-rewrite
functionality of EEPROMs can be emulated. Each boot
block component contains six parameter blocks of 4K
words (4,096 words) each. The protection of the parameter
block is controlled using a combination of the V
CCW
, RP#
and block lock-bit.
Main Blocks: The reminder is divided into main blocks for
data or code storage. Each 16M-bit device contains thirty-
one 32K words (32,768 words) blocks. The protection of
the main block is controlled using a combination of the
V
CCW
, RP# and block lock-bit.
sharp
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
LHF16KA1 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16)
LHF16KA3 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16)
LHF16KA4 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16)
LHF16KA6 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16)
LHF16KA7 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Flash Memory 16M (2MB 】 8/1MB 】 16)
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