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參數(shù)資料
| 型號： | LH52D1000 |
| 廠商： | Sharp Corporation |
| 英文描述： | CMOS 1M (128K x 8) Static Ram |
| 中文描述： | 100萬的CMOS（128K的× 8）靜態(tài)RAM |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 81K |
| 代理商： | LH52D1000 |
TRUTH TABLE
CE
1
CE
2
WE
OE
MODE
I/O
1
– I/O
8
SUPPLY CURRENT
NOTE
H
L
L
L
H
H
L
H
L
Standby
High
impedance
Standby (I
SB
)
1
Write
Read
Data input
Data output
High
impedance
Active (I
CC
)
Active (I
CC
)
1
L
H
H
H
Output disable
Active (I
CC
)
NOTE:
1.
= Don’t care
L = Low
H = High
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
UNIT
NOTE
Supply voltage
Input voltage
Operating temperature
Storage temperature
V
CC
V
IN
T
OPR
T
STG
-0.3 to +4.6
-0.3 to V
CC
+ 0.3
-40 to +85
-55 to +150
V
V
°
C
°
C
1
1, 2
NOTE:
1.
2.
The maximum applicable voltage on any pin with respect to GND.
Undershoot of -3.0 V is allowed width of pulse below 50 ns.
RECOMMENDED DC OPERATING CONDITIONS (T
A
= -40
°
C to +85
°
C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
NOTE
Supply voltage
V
CC
V
IH
V
IL
2.7
2.0
–0.3
3.0
3.6
V
V
V
1
Input voltage
V
CC
+ 0.3
0.6
NOTE:
1.
Undershoot of –3.0 V is allowed width of pulse below 50 ns.
DC ELECTRICAL CHARACTERISTICS (T
A
= -25
°
C to +85
°
C, V
CC
= 2.7 V to 3.6 V)
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Input
leakage
current
Output
leakage
current
I
LI
VIN = 0 to V
CC
–1.0
1.0
μ
A
I
LO
CE
1
= V
IH
or CE
2
= V
IL
or
OE = V
IH
or WE = V
IL
V
I/O
= 0 V to V
CC
–1.0
1.0
μ
A
Operating
supply
current
I
CC
V
IN
= V
IL
or V
IH,
CE
1
= V
IL
, WE = V
IH
CE
2
= V
IH
, I
I/O
= 0 mA
CE
1
= 0.2 V, V
IN
= 0.2 V or V
CC
- 0.2 V
CE
2
, WE = V
CC
- 0.2 V, I
I/O
= 0 mA
CE
1
= V
CC
– 0.2 V or
t
CYCLE
= Min
40
mA
I
CC1
t
CYCLE
= 1.0
μ
s
6
Standby
current
I
SB
CE
2
= 0.2 V
CE
1
= V
IH
or CE
2
= V
IL
I
OL
= 2.1 mA
I
OH
= –0.5 mA
45
μ
A
I
SB1
V
OL
V
OH
2.0
0.4
mA
V
V
Output
voltage
V
CC
- 0.5
CMOS 1M (128K
×
8) Static RAM
LH52D1000
3
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