參數(shù)資料
型號： LH28F160S3B-L13
英文描述： EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|64PIN|PLASTIC
中文描述： 的EEPROM | FLASH動畫| 1MX16/2MX8 |的CMOS | BGA封裝| 64管腳|塑料
文件頁數(shù)： 16/56頁
文件大?。?/td> 373K
代理商： LH28F160S3B-L13
LH28F160S5-L/S5H-L
4.5.4 DEVICE GEOMETRY DEFINITION
This field provides critical details of the flash device geometry.
Table 9 Device Geometry Definition
OFFSET
LENGTH
DESCRIPTION
(Word Address)
27H
01H
Device Size
15H (15H = 21, 2
21
= 2 097 152 = 2 M Bytes)
Flash Device Interface Description
02H, 00H (x8/x16 supports x8 and x16 via BYTE#)
Maximum Number of Bytes in Multi Word/Byte Write
05H, 00H (2
5
= 32 Bytes )
Number of Erase Block Regions within Device
01H (symmetrically blocked)
The Number of Erase Blocks
1FH, 00H (1FH = 31
31 + 1 = 32 Blocks)
The Number of "256 Bytes" cluster in a Erase Block
00H, 01H (0100H = 256
256 Bytes x 256 = 64k Bytes in a Erase Block)
28H, 29H
02H
2AH, 2BH
02H
2CH
01H
2DH, 2EH
02H
2FH, 30H
02H
- 16 -
相關PDF資料
PDF描述
LH28F160S3D-L10 x8/x16 Flash EEPROM
LH28F160S3D-L13 EEPROM|FLASH|1MX16/2MX8|CMOS|SDIP|64PIN|PLASTIC
LH28F160S3HB-L10 x8/x16 Flash EEPROM
LH28F160S3HB-L13 EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|64PIN|PLASTIC
LH28F160S3HD-L10 x8/x16 Flash EEPROM
相關代理商/技術參數(shù)
參數(shù)描述
LH28F160S3D-L10 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY
LH28F160S3D-L13 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY
LH28F160S3HB-L10 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY
LH28F160S3HB-L13 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY
LH28F160S3HD-L10 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY
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