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參數(shù)資料
| 型號(hào)： | LH28F160S3B-L13 |
| 英文描述： | EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|64PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動(dòng)畫(huà)| 1MX16/2MX8 |的CMOS | BGA封裝| 64管腳|塑料 |
| 文件頁(yè)數(shù)： | 15/56頁(yè) |
| 文件大?。?/td> | 373K |
| 代理商： | LH28F160S3B-L13 |
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LH28F160S5-L/S5H-L
- 15 -
4.5.2 CFI QUERY IDENTIFICATION STRING
The identification string provides verification that the
component supports the Common Flash Interface
specification. Additionally, it indicates which version
of the spec and which vendor-specified command
set(s) is(are) supported.
Table 7 CFI Query Identification String
OFFSET
(Word Address)
10H, 11H, 12H
LENGTH
DESCRIPTION
03H
Query Unique ASCII string "QRY"
51H, 52H, 59H
Primary Vendor Command Set and Control Interface ID Code
01H, 00H (SCS ID Code)
Address for Primary Algorithm Extended Query Table
31H, 00H (SCS Extended Query Table Offset)
Alternate Vendor Command Set and Control Interface ID Code
0000H (0000H means that no alternate exists)
Address for Alternate Algorithm Extended Query Table
0000H (0000H means that no alternate exists)
13H, 14H
02H
15H, 16H
02H
17H, 18H
02H
19H, 1AH
02H
4.5.3 SYSTEM INTERFACE INFORMATION
The following device information can be useful in optimizing system interface software.
Table 8 System Information String
OFFSET
LENGTH
DESCRIPTION
(Word Address)
1BH
01H
V
CC
Logic Supply Minimum Write/Erase voltage
27H (2.7 V)
V
CC
Logic Supply Maximum Write/Erase voltage
55H (5.5 V)
V
PP
Programming Supply Minimum Write/Erase voltage
27H (2.7 V)
V
PP
Programming Supply Maximum Write/Erase voltage
55H (5.5 V)
Typical Time-Out per Single Byte/Word Write
03H (2
3
= 8 μs)
Typical Time-Out for Maximum Size Buffer Write (32 Bytes)
06H (2
6
= 64 μs)
Typical Time-Out per Individual Block Erase
0AH (0AH = 10, 2
10
= 1 024 ms)
Typical Time-Out for Full Chip Erase
0FH (0FH = 15, 2
15
= 32 768 ms)
Maximum Time-Out per Single Byte/Word Write, 2
N
times of typical.
04H (2
4
= 16, 8 μs x 16 = 128 μs)
Maximum Time-Out per Maximum Size Buffer Write, 2
N
times of typical.
04H (2
4
= 16, 64 μs x 16 = 1 024 μs)
Maximum Time-Out per Individual Block Erase, 2
N
times of typical.
04H (2
4
= 16, 1 024 ms x 16 = 16 384 ms)
Maximum Time-Out for Full Chip Erase, 2
N
times of typical.
04H (2
4
= 16, 32 768 ms x 16 = 524 288 ms)
1CH
01H
1DH
01H
1EH
01H
1FH
01H
20H
01H
21H
01H
22H
01H
23H
01H
24H
01H
25H
01H
26H
01H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LH28F160S3D-L10 | x8/x16 Flash EEPROM |
| LH28F160S3D-L13 | EEPROM|FLASH|1MX16/2MX8|CMOS|SDIP|64PIN|PLASTIC |
| LH28F160S3HB-L10 | x8/x16 Flash EEPROM |
| LH28F160S3HB-L13 | EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|64PIN|PLASTIC |
| LH28F160S3HD-L10 | x8/x16 Flash EEPROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LH28F160S3D-L10 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY |
| LH28F160S3D-L13 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY |
| LH28F160S3HB-L10 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY |
| LH28F160S3HB-L13 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY |
| LH28F160S3HD-L10 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:16-MBIT(2MBx8/1MBx16) Smart 3 Flash MEMORY |
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