參數(shù)資料
型號： LFX200EB-03F256C
廠商： Lattice Semiconductor Corporation
文件頁數(shù)： 37/119頁
文件大?。?/td> 0K
描述： IC FPGA 200K GATES 256-BGA
標(biāo)準(zhǔn)包裝： 90
系列： ispXPGA®
邏輯元件/單元數(shù)： 2704
RAM 位總計： 113664
輸入/輸出數(shù)： 160
門數(shù)： 210000
電源電壓： 2.3 V ~ 3.6 V
安裝類型： 表面貼裝
工作溫度： 0°C ~ 85°C
封裝/外殼： 256-BGA
供應(yīng)商設(shè)備封裝： 256-FPBGA（17x17）
Lattice Semiconductor
ispXPGA Family Data Sheet
20
pattern by a device programmer, securing proprietary designs from competitors. The entire device must be erased
in order to erase the security scheme.
Density Shifting
The ispXPGA family has been designed to ensure that different density devices in the same package have the
same pin-out. Furthermore, the architecture ensures a high success rate when performing design migration from
lower density parts to higher density parts. In many cases, it is possible to shift a lower utilization design targeted
for a high-density device to a lower density device. However, the exact details of the final resource utilization will
impact the likely success in each case.
Temperature Sensing Diode
The built-in temperature-sensing diodes allow junction temperature to be measured during device operation. A pair
of pins (DXp and DXn) are dedicated for monitoring device junction temperature. The measurement is done by
forcing 10 A and 100 A current in the forward direction, and then measuring the resulting voltage. The voltage
decreases with increasing temperature at approximately 1.64 mV/°C. A typical device with a 85°C junction temper-
ature will measure approximately 593 mV.
The temperature-sensing diode works for the entire operating range as shown in Figure 22 - Sensing Diode Volt-
age-Temperature Relationship. Refer to the Lattice Thermal Management document for thermal coefficients. Also
Figure 22. Sensing Diode Voltage-Temperature Relationship
Voltage
Junction Temperature (
°C)
0.50
0.60
0.70
0.80
-50
0
50
100
125
-25
25
75
0.85
0.65
0.75
0.55
100 uA
10 uA
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參數(shù)描述
LFX200EB-03F256I 功能描述:FPGA - 現(xiàn)場可編程門陣列 210K Gates, 160 I/O 2.5/3.3V, -3 speed RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-256
LFX200EB-03F516C 功能描述:FPGA - 現(xiàn)場可編程門陣列 210K 208 I/O ispJTAG RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-256
LFX200EB-03F516I 功能描述:FPGA - 現(xiàn)場可編程門陣列 210K 208 I/O ispJTAG RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-256
LFX200EB-03FH516C 功能描述:FPGA - 現(xiàn)場可編程門陣列 Use LFX200EB-03F516C RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-256
LFX200EB-03FH516I 功能描述:FPGA - 現(xiàn)場可編程門陣列 Use LFX200EB-03F516I RoHS:否 制造商:Altera Corporation 系列:Cyclone V E 柵極數(shù)量: 邏輯塊數(shù)量:943 內(nèi)嵌式塊RAM - EBR:1956 kbit 輸入/輸出端數(shù)量:128 最大工作頻率:800 MHz 工作電源電壓:1.1 V 最大工作溫度:+ 70 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:FBGA-256
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