參數(shù)資料
型號(hào)： LC72135M
廠商： Sanyo Electric Co.,Ltd.
英文描述： PLL Frequency Synthesizer for Electronic Tuning(用于電子調(diào)諧的鎖相環(huán)頻率合成器)
中文描述： 鎖相環(huán)頻率合成器電子調(diào)諧（用于電子調(diào)諧的鎖相環(huán)頻率合成器）
文件頁(yè)數(shù)： 5/24頁(yè)
文件大?。?/td> 300K
代理商： LC72135M
Electrical Characteristics for the Allowable Operating Ranges
at Ta = –40 to +85°C, V
SS
= 0 V
No. 5175-5/24
LC72135M
Parameter
Symbol
Pins
Conditions
min
typ
max
Unit
M
k
k
k
k
k
k
V
Rf1
XIN
1.0
Built-in feedback resistance
Rf2
FMIN
500
Rf3
AMIN
500
Rf4
HCTR
250
Rf5
LCTR/I1
250
Built-in pull-down resistor
Rpd1
FMIN
200
Rpd2
AMIN
200
Hysteresis
V
HIS
V
OH
1
V
OL
1
CE, CL, DI, IO2, LCTR/I1
0.1 V
DD
Output high-level voltage
PD
I
O
= –1 mA
I
O
= 1 mA
I
O
= 0.5 mA
I
O
= 1 mA
I
O
= 1 mA
I
O
= 5 mA
I
O
= 1 mA
I
O
= 5 mA
I
O
= 8 mA
I
O
= 1 mA, AIN = 1.3 V
V
I
= 6.5 V
V
I
= V
DD,
L/I1 = 0
V
I
= 13 V
V
I
= V
DD
V
I
= V
DD
V
I
= V
DD
, L/I1 = 1
V
I
= 6.5 V
V
I
= 0 V
V
I
= 0 V, L/I1 = 0
V
I
= 0 V
V
I
= 0 V
V
I
= 0 V
V
I
= 0 V, L/I1 = 1
V
I
= 0 V
V
DD
– 1.0
V
PD
1.0
V
V
OL
2
BO1
0.5
V
1.0
V
V
OL
3
DO
0.2
V
Output low-level voltage
1.0
V
0.2
V
V
OL
4
BO2 to BO4, IO2
1.0
V
1.6
V
V
OL
5
I
IH
1
I
IH
2
I
IH
3
I
IH
4
I
IH
5
I
IH
6
I
IH
7
I
IL
1
I
IL
2
I
IL
3
I
IL
4
I
IL
5
I
IL
6
I
IL
7
AOUT
0.5
V
CE, CL, DI
5.0
V
LCTR/I1
5.0
μA
IO2
5.0
μA
Input high-level current
XIN
2.0
11
μA
FMIN, AMIN
4.0
22
μA
HCTR, LCTR/I1
8.0
44
μA
AIN
200
nA
CE, CL, DI
5.0
μA
LCTR/I1
5.0
μA
Input low-level current
IO2
5.0
μA
XIN
2.0
11
μA
FMIN, AMIN
4.0
22
μA
HCTR, LCTR/I1
8.0
44
μA
AIN
200
nA
I
OFF
1
BO1 to BO4, AOUT,
IO2
V
O
= 13 V
5.0
μA
Output off leakage current
I
OFF
2
DO
V
O
= 6.5 V
5.0
μA
High-level three-state
off leakage current
I
OFFH
PD
V
O
= V
DD
0.01
200
nA
Low-level three-state
off leakage current
I
OFFL
PD
V
O
= 0 V
0.01
200
nA
Input capacitance
C
IN
FMIN
6
pF
Xtal = 7.2 MHz,
f
IN
2 = 130 MHz,
V
IN
2 = 40 mVrms
PLL block stopped
(PLL INHIBIT),
Xtal oscillator operating
(Xtal = 7.2 MHz)
I
DD
1
V
DD
5
10
mA
Current drain
I
DD
2
V
DD
0.5
mA
I
DD
3
V
DD
PLL block stopped
Xtal oscillator stopped
10
μA
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