參數(shù)資料
型號: LC587008
廠商: Sanyo Electric Co.,Ltd.
英文描述: Single-Chip 4-Bit Microprocessors with LCD Driver,2 Kb RAM, and 16 KB ROM on chip(4位單片微控制器(帶LCD驅(qū)動器,16K位ROM和2K位RAM))
中文描述: 單芯片4位的LCD驅(qū)動器,2 Kb的RAM和16片KB光盤(4位單片微控制器(帶液晶顯示驅(qū)動器,16K的位光盤和2K位RAM)的微處理器)
文件頁數(shù): 20/29頁
文件大?。?/td> 519K
代理商: LC587008
Specifications
The electrical characteristics specified here are provisional and subject to change.
Absolute Maximum Ratings
at V
SS
= 0 V, Ta = 25°C
Allowable Operating Ranges
at V
SS
= 0 V, Ta = –30 to +70°C
Note: In the state where the CF/RC oscillator and/or the crystal oscillator are completely stopped and the internal circuits are completely stopped.
No. 4435-20/29
LC587008, 587006, 587004
Parameter
Symbol
Conditions
min
typ
max
Unit
V
DD
V
DD
1
V
DD
2
V
I
(1)
–0.3
+7.0
V
Maximum supply voltage
–0.3
V
DD
V
DD
V
–0.3
V
Allowed in the specified circuit (Figure 1), XTIN, CFIN
Allowed up to the generated voltage
Maximum input voltage
V
I
(2)
S1 to S4, K1 to K4, P1 to P4, SO1 to SO4, A1to A4,RES,
INT, TST, (With the K, P, M, SO and ports in input mode)
–0.3
V
DD
+ 0.3
V
V
O
(1)
Allowed in the specified circuit (Figure 1), XTOUT,
CFOUT
Allowed up to the generated voltage
Maximum output voltage
K1 to K4, P1 to P4, SO1 to SO4, A1 to A4, N1 to N4,
CUP1, CUP2, Seg1 to Seg35, COM1 to COM4
(With the K, P, M, SO and A ports in output mode)
V
O
(2)
–0.3
V
DD
+ 0.3
V
V
O
(3)
I
O
(1)
I
O
(2)
I
O
(3)
I
O
(4)
Σ
I
O
(1)
Σ
I
O
(2)
Pd max
Open drain specifications, N1 to N4 (N ch)
–0.3
+13
V
N1 to N4
0
+15
mA
Per pin
–10
0
mA
Output pin current
K1 to K4, P1 to P4, M1 to M4, SO1 to SO4,
A1 to A4
0
5
mA
–5
0
mA
Total current
for all pins
K1 to K4, P1 to P4, M1 to M4, SO1 to
SO4, A1 to A4, N1 to N4, Seg1 to Seg35
70
mA
–70
mA
Allowable power dissipation
QIP80 flat package
500
mW
Operating temperature
Topg
–30
+70
°C
Storage temperature
Tstg
–55
+125
°C
Parameter
Symbol
Conditions
min
typ
max
Unit
LCD unused specifications: V
DD
1 = V
DD
2 = V
DD
Static specifications: V
DD
1 = V
DD
2 = V
DD
1/2 bias specifications: V
DD
1 = V
DD
2
2
×
1/2 V
DD
1/3 bias specifications: V
DD
1
2
×
1/3 V
DD
,
V
DD
2
1/3 V
DD
Voltage required to hold the contents of RAM and
the registers
*
2.0
6.0
V
Supply voltage
V
DD
2.0
6.0
V
2.8
6.0
V
2.8
6.0
V
Hold supply voltage
V
HD
2.0
V
DD
V
Input high level voltage
V
IH
1
0.7 V
DD
V
DD
V
Input low level voltage
V
IL
1
0
0.3 V
DD
V
Input high level voltage
V
IH
2
V
IL
2
V
IH
3
V
IL
3
fopg1
RES pin
0.75 V
DD
V
DD
V
Input low level voltage
0
0.25 V
DD
V
Input high level voltage
CFIN pin
0.75 V
DD
V
DD
V
Input low level voltage
0
0.25 V
DD
V
Operating frequency 1
V
DD
= 2.0 to 6.0 V, 32 kHz
V
DD
= 2.2 to 6.0 V. 38 kHz
V
DD
= 2.2 to 6.0 V, 65 kHz
V
DD
= 2.2 to 6.0 V
V
DD
= 2.5 to 6.0 V
V
DD
= 2.5 to 6.0 V
V
DD
= 2.8 to 6.0 V
V
DD
= 4.0 to 6.0 V, CFIN/CFOUT RC specifications
V
DD
= 2.0 to 6.0 V, CFIN/CFOUT EXT specifications
V
DD
= 3.0 to 6.0 V, O1/SO3 pins (in serial mode),
Rising and falling edges on the input signals and
clock waveform of the SO1/SO3 pins (in serial mode)
must be 10 μs or less.
XTIN/XTOUT crystal
oscillator
32
33
kHz
Operating frequency 2
fopg2
37
39
kHz
Operating frequency 3
fopg3
60
70
kHz
Operating frequency 4
fopg4
190
810
kHz
Operating frequency 5
fopg5
CFIN/CFOUT CF specifications
190
1200
kHz
Operating frequency 6
fopg6
190
2300
kHz
Operating frequency 7
fopg7
190
4200
kHz
Operating frequency 8
fopg8
100
1500
kHz
Operating frequency 9
fopg9
190
800
kHz
Operating frequency 10
fopg10
DC
200
kHz
S1 to S4, K1 to K4, P1 to P4, M1 to M4, SO1 to SO4,
A1 to A4, INT, (With the K, P, M, SO and ports in input
mode)
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