- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄358754 > LC35W1000BM (Sanyo Electric Co.,Ltd.) Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | LC35W1000BM |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| 中文描述： | 異步硅門(mén)100萬(wàn)（131072字× 8位）的SRAM |
| 文件頁(yè)數(shù)： | 5/9頁(yè) |
| 文件大?。?/td> | 165K |
| 代理商： | LC35W1000BM |
AC Electrical Characteristics
at Ta = –40 to +85°C, V
CC
= 2.7 to 3.6 V
AC test conditions
Input pulse voltage levels: V
IL
= 0.2 V
CC
, V
IH
= 0.8 V
CC
Input rise and fall times: 5 ns
Input and output timing leves: 1/2 V
CC
Output load: 30 pF (including the jig capacitance)
No. 6624-5/9
LC35W1000BM, BTS-70U/10U
Read cycle
Parameter
Symbol
–70U
–10U
min
max
min
max
Unit
Read cyle time
t
RC
t
AA
t
CA1
t
CA2
t
OA
t
OH
t
COE1
t
COE2
t
OCE
t
COD1
t
COD2
t
OOD
70
100
ns
Address access time
70
100
ns
CE1 access time
70
100
ns
CE2 access time
70
100
ns
OE access time
50
50
ns
Output hold time
10
10
ns
CE1 output enable time
10
10
ns
CE2 output enable time
10
10
ns
OE output enable time
5
5
ns
CE1 output disable time
40
35
ns
CE2 output disable time
40
35
ns
OE output disable time
35
30
ns
Write cycle
Parameter
Symbol
–70U
–10U
min
max
min
max
Unit
Write cyle time
t
WC
t
AS
tWP
70
100
ns
Address setup time
0
0
ns
Write pulse width
50
70
ns
CE1 setup time
t
CW1
t
CW2
t
WR
t
WR1
t
WR2
t
DS
t
DH
t
DH1
t
DH2
t
WOE
t
WOD
60
90
ns
CE2 setup time
60
90
ns
Write recovery time
0
0
ns
CE1 write recovery time
0
0
ns
CE2 write recovery time
0
0
ns
Data setup time
40
50
ns
Data hold time
0
0
ns
CE1 data hold time
0
0
ns
CE2 data hold time
0
0
ns
WE output enable time
5
5
ns
WE output disable time
35
30
ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| LC35W1000BTS-10U | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BM-10U | |
| LC35W1000BM-70U | |
| LC35W1000BTS | |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| LC35W1000BM-10U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BM-70U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BTS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BTS-10U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BTS-70U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。