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參數(shù)資料
| 型號： | LC35W1000BM |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| 中文描述： | 異步硅門100萬（131072字× 8位）的SRAM |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 165K |
| 代理商： | LC35W1000BM |
Block Diagram
No. 6624-3/9
LC35W1000BM, BTS-70U/10U
Control
circuit
Data control circuit
Output
buffer
Input
data
buffer
Memory cell array
R
A
Pin Functions
A0 to A16
Address input
WE
Ready/write control input
OE
Output enable input
CE, CE2
Chip enable input
I/O1 to I/O8
Data I/O
V
CC
, GND
Power supply, ground
Function Table
Note: X indicates H or L.
*
: For pulse widths under 30 ns: –2.0 V
Note: This chip may be destroyed if any stress in excess of the absolute maximum ratings is applied.
Mode
CE1
CE2
OE
WE
I/O
Supply current
Ready cycle
L
H
L
H
Data output
I
CCA
I
CCA
I
CCA
I
CCS
I
CCS
Write cycle
L
H
X
L
Data input
Output disable
L
H
H
H
High impedance
Unselected
H
X
X
X
High impedance
X
L
X
X
High impedance
Parameter
Symbol
Conditions
Ratings
Unit
Maximum supply voltage
V
CC
max
V
IN
V
I/O
Topr
4.6
V
Input pin voltage
–0.3
*
to V
CC
+ 0.3
–0.3 to V
CC
+ 0.3
–40 to +85
V
I/O pin voltage
V
Operating temperature
°C
Storage temperature
Tstg
–55 to +125
°C
Specifications
Maximum Ratings
at Ta = 25°C
相關PDF資料 |
PDF描述 |
|---|---|
| LC35W1000BTS-10U | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BTS-70U | Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BM-10U | |
| LC35W1000BM-70U | |
| LC35W1000BTS | |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| LC35W1000BM-10U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BM-70U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BTS | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述: |
| LC35W1000BTS-10U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
| LC35W1000BTS-70U | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM |
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